Intense THz pulses cause H2AX phosphorylation and activate DNA damage response in human skin tissue

Titova, Lyubov V.; Ayesheshim, Ayesheshim K.; Golubov, Andrey; Fogen, Dawson; Rodriguez-Juarez, Rocio; Hegmann, Frank A.; Kovalchuk, Olga

doi:10.1364/boe.4.000559

Cited by 135 publications

(96 citation statements)

References 58 publications

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“…However, comparison of the dielectric responses of normal and cancer cells in the THz region will enhance knowledge of relationship between intracellular water and cellular malignancy that is pointed out in the earlier NMR experiments [17], and will provide a new means to digitally enumerate cellular activities or functions. Furthermore, these studies of cellular dielectric responses may help to accelerate and optimize the current investigations into the effect of THz radiation on human cells and tissues [37][38][39].…”

Section: Discussionmentioning

confidence: 99%

Characterization of Dielectric Responses of Human Cancer Cells in the Terahertz Region

Shiraga

Ogawa

Suzuki

et al. 2014

J Infrared Milli Terahz Waves

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Terahertz time-domain attenuated total reflection spectroscopy, in combination with a two-interface model, is used to determine the complex dielectric constants of cultured human cancer cells (DLD-1, HEK293 and HeLa). Picosecond and sub-picosecond water dynamics are dominant in the measured complex dielectric constants of these cells. We demonstrate that dielectric responses below 1.0 THz best characterize the particular water dynamics of cancer cells when compared with extracellular water. Debye-Lorentz fitting revealed that this is due to a significantly attenuated slow relaxation mode and enhanced fast relaxation mode of the water in these cancer cells. These findings could lead to a new procedure to digitally evaluate cellular activities or functions, in terms of intracellular water dynamics, and remove the veil from the mysterious intracellular milieu.

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Section: Discussionmentioning

confidence: 99%

Characterization of Dielectric Responses of Human Cancer Cells in the Terahertz Region

Shiraga

Ogawa

Suzuki

et al. 2014

J Infrared Milli Terahz Waves

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“…Titova et al, reported a significant induction of histone phosphorylation after THz exposure in artificial human skin tissues, indicating that THz radiation may cause DSBs. Besides, an increase in the levels of several proteins involved in cell-cycle regulation and tumor suppression was reported, suggesting that DNA repair mechanisms are quickly activated [30]. Conversely, in a recent study Bogomazova et al, did not recognize the formation of H2AX phosphorylation foci or structural chromosomal aberrations in human embryonic stem cells [31].…”

Section: Introductionmentioning

confidence: 97%

Biological effects of in vitro THz radiation exposure in human foetal fibroblasts

Amicis¹,

Sanctis²,

Cristofaro³

et al. 2015

Mutation Research/Genetic Toxicology and Environmental Mutagene

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“…In addition, detaching the historical structures, such as wall paintings, to place them in a protected x-ray imaging chamber is not feasible. Although the degrading effect of intense THz radiation on DNA is reported, [12][13][14] no other degrading effect is observed, and THz is still considered to be safer than x-ray in many areas. As a result, THz spectroscopy and imaging systems provide promising substitutes for ionizing x-ray and invasive chemical characterization tools in wide varieties of applications.…”

Section: Introductionmentioning

confidence: 99%

Review of GaN-based devices for terahertz operation

Ahi

2017

Opt. Eng

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Abstract. GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ∼90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaNbased devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

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Intense THz pulses cause H2AX phosphorylation and activate DNA damage response in human skin tissue

Cited by 135 publications

References 58 publications

Characterization of Dielectric Responses of Human Cancer Cells in the Terahertz Region

Characterization of Dielectric Responses of Human Cancer Cells in the Terahertz Region

Biological effects of in vitro THz radiation exposure in human foetal fibroblasts

Review of GaN-based devices for terahertz operation

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