Interaction between <i>n</i>-type amorphous hydrogenated silicon films and metal electrodes

Ishihara, Shin-ichiro; Hirao, Takashi; Mori, K.; Kitagawa, Masatoshi; Ohno, Masaharu; Kohiki, Shigemi

doi:10.1063/1.331098

Cited by 33 publications

(5 citation statements)

References 5 publications

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“…These two effects – a drastic loss in series resistance and passivation quality at the same time – can be explained by interdiffusion effects at the amorphous silicon/aluminum interface. Already at temperatures as low as 150 °C aluminum and amorphous silicon will start to form an alloy that greatly improves contact resistivity . Further annealing leads to an extended diffusion of aluminum into the amorphous silicon layers, eventually reaching the interface between the intrinsic passivation layer and the crystalline absorber.…”

Section: Solar Cell Illuminated J–v Parametersmentioning

confidence: 99%

Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells

et al. 2017

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We report on the design and manufacturing of interdigitated back contact cells based on the silicon heterojunction technology. The influence of geometry and overlap of the doped amorphous silicon layers forming the contact fingers on device performance have been investigated by simulation. Two contact formation concepts, with and without a TCO interlayer – an indium tin oxide/silver (ITO/Ag) stack, and a direct aluminum (Al) metallization – are experimentally evaluated. The former retains good passivation but leads to a too high contact resistivity, the latter shows the opposite behavior, but yields a slight benefit in terms of overall performance achieving more than 20% of efficiency. We show that in this case a contact system is formed whose properties can be tuned by annealing, enabling a trade‐off between VOC and FF. Structure of the presented solar cell; a SiNX layer covers the front side, the rear side is passivated by overlapping layer stacks of intrinsic and doped amorphous silicon, the latter are contacted by aluminum.

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Section: Solar Cell Illuminated J–v Parametersmentioning

confidence: 99%

Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells

et al. 2017

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“…2 However, for the case of Al/a-Si:H, the interaction temperature is much lower, starting at about 170°C. 3 It should be noted here that a temperature of about 650°C is required for the solid phase crystallization of a-Si into c-Si. 4 Crystallization of a-Si:H in contact with different contact metals during annealing at relatively low temperatures has been reported.…”

Section: Introductionmentioning

confidence: 97%

Aluminum-induced crystallization and counter-doping of phosphorous-doped hydrogenated amorphous silicon at low temperatures

Haque

Naseem

Brown

1996

Journal of Applied Physics

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Articles you may be interested inExcimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors Appl.Effects of high temperature rapid thermal annealing using a flat gas flame on the electrical properties of phosphorusdoped polycrystalline silicon films A comparative study of the lightinduced defects in intrinsic amorphous and microcrystalline silicon deposited by remote plasma enhanced chemical vapor deposition AIP Conf.Aluminum metal-induced crystallization and doping of hydrogenated amorphous silicon ͑a-Si:H͒ have been investigated. Aluminum was evaporated onto device quality a-Si:H films deposited in an ultrahigh vacuum plasma-enhanced chemical vapor deposition system. These Al/a-Si:H structures were annealed in the 100-300°C range. Electrical, surface morphological, and chemical characterizations of the material were performed. The transmission line model technique was used for electrical characterization. Raman spectroscopy showed that crystallization of the interacted a-Si:H film underneath Al pads initiates at temperatures as low as 180°C. X-ray diffraction analysis showed very good polycrystallinity of the interacted film. Electrical measurement, Hall measurement and x-ray photoelectron spectroscopy analysis results revealed that a-Si:H film in contact with Al becomes heavily doped by Al during crystallization as a result of annealing at relatively low temperatures.

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“…Ishihara et al reported the presence of pits in the amorphous silicon layers produced by the interdiffusion of both aluminium and amorphous silicon at temperatures as low as 170 °C. 21) Haque et al studied extensively the aluminium-induced crystallisation of amorphous silicon layers and the subsequent changes in their electrical properties at temperatures ranging from 150 to 300 °C. 22,23) Hentzell et al proved the existence of an Al silicide, starting to form at a temperature of approximately 170 °C, prior to the silicon crystallisation.…”

Section: Resultsmentioning

confidence: 99%

“…The interaction of aluminium and amorphous silicon layers after annealing at different temperatures has been studied thoroughly by many researchers.Ishihara et al reported the presence of pits in the amorphous silicon layers produced by the interdiffusion of both aluminium and amorphous silicon at temperatures as low as 170°C 21…”

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confidence: 99%

Aluminium metallisation for interdigitated back-contact silicon heterojunction solar cells

Stang

Haschke

Mews

et al. 2017

Jpn. J. Appl. Phys.

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Back-contact silicon heterojunction solar cells with an efficiency of 22% were manufactured, featuring a simple aluminium metallisation directly on the doped amorphous silicon films. Both the open-circuit voltage and the fill factor heavily depend on the parameters of the annealing step after aluminium layer deposition. Using numerical device simulations and in accordance with the literature, we demonstrate that the changes in solar cell parameters with annealing can be explained by the formation of an aluminium silicide layer at temperatures as low as 150°C, improving the contact resistance and thus enhancing the fill factor. Further annealing at higher temperatures initialises the crystallisation of the amorphous silicon layers, yielding even lower contact resistances, but also introduces more defects, diminishing the open-circuit voltage.

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Interaction between n-type amorphous hydrogenated silicon films and metal electrodes

Abstract: Articles you may be interested inDrain current reduction by source electrode overlap in hydrogenated amorphous silicon thinfilm transistors

Cited by 33 publications

References 5 publications

Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells

Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells

Aluminum-induced crystallization and counter-doping of phosphorous-doped hydrogenated amorphous silicon at low temperatures

Aluminium metallisation for interdigitated back-contact silicon heterojunction solar cells

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