Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

Pudalov, V. M.; Gershenson, M. E.; Kojima, H.; Brunthaler, G.; Prinz, A.; Bauer, G.

doi:10.1103/physrevlett.91.126403

Cited by 81 publications

(95 citation statements)

References 25 publications

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“…7) actually agrees much better with the experimental data than the realistic quasi-2D calculation with charged Coulomb impurity scattering as the bare disorder (dashed lines) since the experimental data of ref. [22] shows stronger temperature dependence quantitatively than the theoretical results of Fig. 7 (again this is consistent with the discussion of Sec.…”

Section: Comparison With Experimentssupporting

confidence: 91%

“…solid and dashed lines in Fig. 7 since the slopes of the two lines are the same in the T → 0 limit where both are strictly linear in T /T F as discussed above in section III; (4) the calculated results, while being qualitatively similar to the data [22], disagree quantitatively with experiment with the quantitative disagreement increasing with decreasing carrier density; (5) the unrealistic strictly 2D approximation with zero-range δ-function bare disorder potential (solid lines in Fig. 7) actually agrees much better with the experimental data than the realistic quasi-2D calculation with charged Coulomb impurity scattering as the bare disorder (dashed lines) since the experimental data of ref.…”

Section: Comparison With Experimentssupporting

confidence: 70%

“…1(a) in ref. [22] corresponding to the Si-22 sample all seem to obey the asymptotic linear temperature dependence although, in general, there is significant deviation from linearity both at the lowest (≤ 0.5K) and at the highest (≤ 5K) temperatures.…”

Section: Comparison With Experimentsmentioning

confidence: 91%

“…[21]. A thorough understanding of this first order linear term in the theory has taken on significance in view of the existence of the Zala et al [21] work, and even more importantly, because of the several recent attempts [11,22,23] to compare experimental results to the interaction theory. The interaction theory considerably extends the screening theory (through the inclusion of higherorder interaction corrections), but is unfortunately constrained at this stage to only the leading order result in t, and therefore applies only at very high (low) densities (temperature) so that the constraints t ≪ 1 and △ρ/ρ 0 ≪ 1 are satisfied.…”

Section: Low Temperature Asymptotic Behaviormentioning

confidence: 99%

“…1(a) of ref. [22]; (2) in spite of this qualitative linearity of ρ(T ), the actual curves are nonlinear except at the highest densities; (3) an approximate measure (actually a lower bound) of this nonlinearity is the difference between the 11 cm −2 , including realistic surface roughness and interface (oxide) charged impurity scattering. In (c) the thin (thick) solid line represents the result using the band effective mass (the measured effective mass from Ref.…”

Section: Comparison With Experimentsmentioning

confidence: 99%

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Metallicity and its low-temperature behavior in dilute two-dimensional carrier systems

Sarma

Hwang

2004

Phys. Rev. B

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We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanation for the strength of metallicity in various 2D carrier systems. By carefully comparing the calculated full nonlinear temperature dependence of electronic resistivity at low temperatures with the corresponding asymptotic analytic form obtained in the T /TF → 0 limit, both within the RPA screened charged impurity scattering theory, we critically discuss the applicability of the linear temperature dependent correction to the low temperature resistivity in 2D semiconductor structures. We find quite generally that for charged ionized impurity scattering screened by the electronic dielectric function (within RPA or its suitable generalizations including local field corrections), the resistivity obeys the asymptotic linear form only in the extreme low temperature limit of T /TF ≤ 0.05. We point out the experimental implications of our findings and discuss in the context of the screening theory the relative strengths of metallicity in different 2D systems.

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Section: Comparison With Experimentssupporting

confidence: 91%

Section: Comparison With Experimentssupporting

confidence: 70%

Section: Comparison With Experimentsmentioning

confidence: 91%

Section: Low Temperature Asymptotic Behaviormentioning

confidence: 99%

Section: Comparison With Experimentsmentioning

confidence: 99%

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Metallicity and its low-temperature behavior in dilute two-dimensional carrier systems

Sarma

Hwang

2004

Phys. Rev. B

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Charge Transport via Delocalized States in Disordered Materials

Zvyagin

2006

Charge Transport in Disordered Solids With Applications in Electronics

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Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si‐MOSFETs?

Pudalov

Gershenson

Kojima

et al. 2003

Physica Status Solidi (b)

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We compare the temperature and in-plane magnetic field dependences of resistivity qðT; B k Þ of Si MOSFETs with the recent theories. In the comparison we use the effective mass m * and g * -factor determined independently. An anomalous increase of q with temperature, which has been considered a signature of the ''metallic" state, for high conductivities (s > e 2 =h) can be described quantitatively by the interaction effects in the ballistic regime. qðB k Þ is consistent with the theory only qualitatively; it is found to be more susceptible than qðTÞ to details of disorder, possibly associated with magnetic moments of localized states. Description of the transport in the ''critical" regime of q $ h=e 2 is still lacking.1 Introduction One of the outstanding problems of modern solid state physics is the behavior of strongly-interacting and disordered electron systems. The theoretical description of 2D systems has far not reached a predictive ''first principle" stage and a number of effects observed experimentally at high interaction strength remains puzzling. A well-known example is anomalous low-temperature increase of the conductivity in 2D systems with cooling, which has been observed in the beginning of 90's in high-mobility Si-MOSFETs. This ''metallic" behavior transforms eventually to the ''insulating" behavior as electron density decreases below a critical value n c [1,2]. Because of the apparent disagreement with the single-particle theory, the phenomenon of the ''metallic" conduction and apparent metal-insulator transition in 2D attracts a great deal of interest. The similar behavior was found later for many other high-mobility and low-density 2D systems (p-and n-type GaAs/AlGaAs, n-type AlAs, p-type Si/SiGe, etc.) [1,2]. The interactions must play a significant role in this phenomenon, because the ratio of the Coulomb to Fermi energy r s increases / n À1=2 and reaches a factor of $ 10 as electron density n decreases.

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Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

Cited by 81 publications

References 25 publications

Metallicity and its low-temperature behavior in dilute two-dimensional carrier systems

Metallicity and its low-temperature behavior in dilute two-dimensional carrier systems

Charge Transport via Delocalized States in Disordered Materials

Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si‐MOSFETs?

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