Interaction of atomic hydrogen with the surface methyl group on Si(100) — removal of surface carbon

Cheng, Chih‐Chia; Lucas, S. R.; Gutleben, H.; Choyke, W. J.; Yates, John T.

doi:10.1016/0039-6028(92)90267-a

Cited by 37 publications

(19 citation statements)

References 25 publications

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“…This is indicative of a well-functioning surface chemistry with the ammonia plasma, aiding in the removal of the methyl groups on the surface. 22 Significant amounts of oxygen (O) were detected in the bulk of the film, (Table I). This could be caused by oxygen containing species formed in the quartz tube of the inductively coupled plasma source.…”

Section: Resultsmentioning

confidence: 99%

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Deminskyi

Rouf

Ivanov

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si(100). We found a narrow ALD window of 240-260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray diffraction measurements further confirmed the polycrystalline nature of InN thin films. X-ray photoelectron spectroscopy measurements show nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH3 plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.

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Section: Resultsmentioning

confidence: 99%

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Deminskyi

Rouf

Ivanov

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Reaction may occur with either physisorbed methylsilane or the film surface. This may occur by etching or abstraction reactions, for example: Gas−surface reactions of this sort have been well-documented in the literature. ,,− …”

Section: Discussionmentioning

confidence: 99%

Bonding and Thermal Reactivity in Thin a-SiC:H Films Grown by Methylsilane CVD

Lee

Bent

1997

J. Phys. Chem. B

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The bonding and thermal reactivity of thin a-SiC:H films have been studied and compared with that of methyl groups on single-crystalline Si and in thick polymer films. The films were deposited on silicon substrates at 200 K by hot-wire chemical vapor deposition (CVD) using methylsilane (CH3SiH3) as the precursor. The resulting films were probed by in situ multiple internal reflection−Fourier transform infrared (MIR−FTIR) spectroscopy, and the thermal decomposition products were measured by temperature-programmed reaction/desorption (TPR/D). According to MIR−FTIR measurements, hydrogen is present in the films in the form of mixed silicon hydride species (SiH, SiH2, and SiH3) and intact methyl groups. TPR/D and MIR−FTIR annealing studies following growth at 200 K indicate that the film is stable up to 550 K. Above 550 K, a number of thermal etching processes are observed, leading to silane and methylsilane evolution at 600 K, followed by the loss of methane and molecular hydrogen by 780 K. Annealing studies show that the SiH3 species are more reactive at thermal energies than are methyl groups. The stability of methyl groups and the silicon mono- and dihydride groups in the films largely parallels that observed on single-crystalline silicon, but more reaction pathways are available in the thin films. Mechanisms for the film growth and thermal decomposition are proposed.

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“…24 In Situ Wafer Cleaning 200-400ЊC prebakes.-The purpose of a very low-temperature (e.g., 200-400ЊC) bake is to desorb physisorbed chemical contamination from the surface before the chemical contamination can dissociate and chemisorb to the wafer surface, which occurs first at higher temperatures. 25 Any chemisorbed carbon that is consequently annealed at high temperature can form stable SiC precipitates on the surface 26 or diffuse into the bulk, 26 leading to undesirable defect formation.…”

Section: Contamination From Reactor Load-lock and Laboratorymentioning

confidence: 99%

Low-Temperature Preparation of Oxygen- and Carbon-Free Silicon and Silicon-Germanium Surfaces for Silicon and Silicon-Germanium Epitaxial Growth by Rapid Thermal Chemical Vapor Deposition

Carroll

Sturm

Yang

2000

J. Electrochem. Soc.

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Photoluminescence (PL) from commensurately strained SiGe layers grown directly on silicon substrates and secondary ion mass spectroscopy (SIMS) of buried Si/SiGe interfaces are used to evaluate different low-temperature cleaning methods of substrate surfaces for silicon and SiGe epitaxy in a nonultrahigh vacuum system. Both the sources of contamination as well as effective cleaning methods were investigated. The dominant source of contamination came from the wafer being outside the reactor, not in the load lock or deposition chamber itself. The optimum surface preparation depends on the ratios of HF, NH 4 F, and deionized water of solutions that were used to remove the wet chemical oxide on the substrate surface. In situ bakes between 300 and 800ЊC in 0.25-250 Torr of hydrogen were examined after the ex situ clean using PL and SIMS measurements. An optimized ex situ clean [1:1000 HF(49%):deionized water (DI)] and in situ hydrogen bake (2 min at 800ЊC in 10 Torr) produces an oxygen-and carbonfree surface for silicon and SiGe epitaxy.

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Interaction of atomic hydrogen with the surface methyl group on Si(100) — removal of surface carbon

Cited by 37 publications

References 25 publications

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Bonding and Thermal Reactivity in Thin a-SiC:H Films Grown by Methylsilane CVD

Low-Temperature Preparation of Oxygen- and Carbon-Free Silicon and Silicon-Germanium Surfaces for Silicon and Silicon-Germanium Epitaxial Growth by Rapid Thermal Chemical Vapor Deposition

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