Interaction of cesium with charged oxide under UV irradiation imaged by photoemission electron microscopy

Fukidome, Hirokazu; Yoshimura, Masamichi; Ueda, Kazuyuki

doi:10.1016/j.susc.2007.04.226

Cited by 1 publication

(1 citation statement)

References 17 publications

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“…[3 -5] Ballarotto et al [6] showed that the intensity of photoelectron emission microscopy (PEEM) images for p-type Si(001) increases with boron concentration. Fukidome et al [7] reported the observation of the charging of ion-implanted SiO 2 /Si(100) due to electron transfer from Si substrate using PEEM. However, the origin of the electron trapping site in the oxide remains unclear.…”

Section: Introductionmentioning

confidence: 99%

Photoelectric threshold of silicon wafer surfaces implanted with H, Si and Ar ions

Momose¹,

Kosaka²,

Sakurai³

et al. 2010

Surface & Interface Analysis

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The effect of ion implantation on the photoemission spectral yield for native oxide-covered Si(100) wafer surfaces has been studied. Three types of H, Si and Ar atoms were employed for the ion implantation. For one sample the yield curve was measured successively first at 25• C, next after heating to 340• C, and subsequently after cooling to 40 • C. All implanted samples showed the photoemission in the spectral yield with a much enhanced intensity compared to a nonimplanted sample, moreover, more strongly at 340• C than at 25 and 40• C. The analysis of the yield curve showed two distinct photothresholds of φ 1 and φ 2 , which can be attributed to the interface states at the SiO 2 /Si interface and the silicon bulk, respectively, and the creation of a localized emitting center ascribed to E center ( Si ·). Both thresholds for the implanted samples were reduced about 0.3-0.5 eV compared to those for the nonimplanted sample. The localized center appeared at the photon energy of 5.66 eV (25 and 40• C) and 5.76 eV (340• C), and the amount of the centers created at 340• C was much greater than that at 25 and 40 • C. Interestingly, the amount of the E centers at 25• C for the H implanted sample tended to decrease with an increase in the concentration of implanted H atoms.

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Section: Introductionmentioning

confidence: 99%