2010
DOI: 10.1002/pssc.200982488
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Interaction of GaN(0001)‐2×2 surfaces with H2O

Abstract: We performed an in‐situ analysis of the interaction of water with clean 2×2 reconstructed GaN(0001) surfaces grown by plasma assisted molecular beam epitaxy. The as‐grown surfaces were exposed to molecular water by backfilling. Photoemission spectra reveal an extremely high reactivity and dissociative adsorption with an oxygen sticking coefficient of 0.3 and a saturation coverage of approximately 1 ML. Core level spectra of the O1s state show three individual oxygen components with different temporal behavior.… Show more

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Cited by 32 publications
(40 citation statements)
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“…More information about the surface states on GaN(0001)‐2 × 2 can be found in Ref. 8, 20. The GaN($000\bar {1}$ )‐1 × 1 surface exhibits a surface state at 2.5 eV (S*).…”
Section: Resultsmentioning
confidence: 99%
“…More information about the surface states on GaN(0001)‐2 × 2 can be found in Ref. 8, 20. The GaN($000\bar {1}$ )‐1 × 1 surface exhibits a surface state at 2.5 eV (S*).…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore in the third region two non-dispersive states at 2 eV and 3 eV were found. Both states are extremely sensitive to molecular species, especially oxygen and water [11]. The surface state S1 is directly linked to the 2×2 reconstruction [9,12], while the surface state S2 was also found on GaN(0001) surfaces with no superstructure [13].…”
Section: Resultsmentioning
confidence: 99%
“…However, some additional structures are seen in the UPS spectra in particular around 2 eV (S1), 3 eV (S2), 7 eV and 9-10 eV. The states S1 and S2 are related to surface states and are very sensitive to residual molecules especially oxygen and water [9,11]. The comparison of the theoretical position of the surface states bands of different 2×2 reconstruction [12] presented a good agreement between the theoretical prediction for the nitrogen adatom induced 2×2 and the experimental data.…”
Section: Discussionmentioning
confidence: 97%
“…Наиболее полную информацию об электронной структуре дают результаты фотоэмиссионных исследований с помощью фотоэлектронной спектроскопии. Электронная структура GaN(0001) довольно подробно исследована экспериментально [1][2][3][4][5][6] и теоретически [7][8][9][10][11]. Спектр фотоэмиссии в области валентной зоны представляет собой слабоструктурированную полосу шириной ∼ 9 eV ниже края валентной зоны E VBM с некоторыми особенностями в спектре, природа которых, как правило, связана с поверхностными состояниями [7,9].…”
unclassified
“…Такое поведение можно связать с подавлением поверхностных состояний GaN(0001), которые расположены при энергиях связи, больших чем 3 eV. Подавление интенсивности поверхностного состояния S1 ранее наблюдалось при адсорбции кислорода и воды на GaN(0001)-2 × 2 [1,2]. Полученные нами результаты хорошо согласуются с расчетом электронной структуры Cs/GaN(0001)-2 × 2 для θ = 0.33 ML [10].…”
unclassified