Interaction of Ni90Ti10 alloy thin film with 6H-SiC single crystal

Levit, Michael; Grimberg, I.; Weiss, B. Z.

doi:10.1063/1.362801

Cited by 40 publications

(15 citation statements)

References 18 publications

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“…According to the ternary phase diagram in the Ni-Si-C system at 850uC, only Ni 2 Si can be in equilibrium with both C and SiC. 11 The reaction is thus…”

Section: Resultsmentioning

confidence: 99%

Study of reaction process on Ni/4H–SiC contact

Cao¹,

Nyborg²,

Yi³

et al. 2006

Materials Science and Technology

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The present study deals with mechanisms of the reaction process of fabricated thin film Ni/SiC contacts by means of XRD, XPS and Raman spectroscopy. After annealing SiC samples sputter coated with Ni at 800 and 950uC in vacuum for 20 min, the dominant silicide is textured Ni 2 Si. Its formation consists of two stages: initial reaction rate and subsequent diffusion controlled stage. For ultra thin initial Ni layer (y3-6 nm), islands formation of Ni 2 Si is observed after heat treatment. Increasing the Ni film thickness prevents this phenomenon. The C released owing to the Ni 2 Si formation reaction forms a thin graphite layer on the top of the surface and also tends to form cluster inside the reaction layer. The overall degree of graphitisation is higher at 950uC than that at 800uC.

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“…According to the ternary phase diagram in the Ni-Si-C system at 850uC, only Ni 2 Si can be in equilibrium with both C and SiC. 11 The reaction is thus…”

Section: Resultsmentioning

confidence: 99%

Study of reaction process on Ni/4H–SiC contact

Cao¹,

Nyborg²,

Yi³

et al. 2006

Materials Science and Technology

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show abstract

“…Therefore, the improvement of the barrier homogeneity can be explained by the formation of nickel silicide (Ni 2 Si), which starts to form after annealing at 600°C by reaction of nickel with silicon carbide. At this temperature and for short annealing time, however, the Ni 2 Si phase still coexists with the Ni 31 Si 12 , which is the first phase forming in the reaction of the Ni-Si-C system because of its more negative hentalpy [9]. As consequence of the presence of both Ni 31 Si 12 and Ni 2 Si at 600°C, a wide distribution of the Schottky barrier heights is observed.…”

Section: Discussionmentioning

confidence: 89%

High Reproducible Ideal SiC Schottky Rectifiers by Controlling Surface Preparation and Thermal Treatments

Roccaforte

Via

Raineri

2002

32nd European Solid-State Device Research Conference

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In this work, the effects of surface preparation on the forward I-V characteristic of Ni/6H-SiC Schottky diodes were studied. The ideality factor n and the barrier height B were found to be strongly dependent on the surface treatment prior to Schottky contact deposition. On the other hand, the diodes annealed above 600°C exhibited an almost ideal I-V curve, independently of the surface preparation. Further improvement in the barrier height distribution can be obtained by increasing annealing temperature up to 950°C.The formation of nickel silicide was responsible for this behaviour and, under appropriate annealing conditions, may be the key to achieve a higher reproducible nearly ideal Schottky diode.

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“…Moreover, the direct reaction between Ni and Si is also exothermic. 33 Consequently, beyond decreasing grain sizes and improving dielectric properties, Ni may also have an active role in promoting the combustion synthesis of SiC.…”

Section: Discussionmentioning

confidence: 99%

“…38 Nevertheless, it has been reported that Ni does not easily form stable carbides. 33,39,40 Therefore, SiC nuclei (Eq. [1]) should predominantly form and be dispersed in the bulk of the droplet, which subsequently grows to form SiC grains.…”

Section: May 2011mentioning

confidence: 99%

Production of Ni-Doped SiC Nanopowders and their Dielectric Properties

Jin

Cao

et al. 2011

Journal of the American Ceramic Society

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Nanopowders of nickel‐doped β‐silicon carbide (β‐SiC) with improved dielectric properties (compared with pure β‐SiC) were successfully produced using the mechanically activated self‐propagating high‐temperature synthesis method in an argon (Ar) atmosphere. The molar substitution of nickel (Ni) for silicon (Si) was 1%, 3%, and 5%. Powders of poly(tetrafluoroethylene) and ammonium chloride (NH4Cl) were used to promote the combustion reaction. The experimental results indicated an active role of Ni in the mechanism of combustion synthesis of SiC powders, which was reflected in the increase in combustion temperature and the velocity of propagation of the combustion wave, the microstructure of the produced nanopowders with a grain size of 100 nm for 5% Ni, and an improvement in the dielectric properties, specifically the increase in real (ɛ′) and imaginary parts (ɛ″) of the complex permittivity, in the frequency range of 8.2–12.4 GHz, compared with pure SiC. The X‐ray analysis of the produced powders suggests that Ni is accommodated in the lattice of SiC, which shrinks with increasing amounts of Ni.

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Interaction of Ni90Ti10 alloy thin film with 6H-SiC single crystal

Cited by 40 publications

References 18 publications

Study of reaction process on Ni/4H–SiC contact

Study of reaction process on Ni/4H–SiC contact

High Reproducible Ideal SiC Schottky Rectifiers by Controlling Surface Preparation and Thermal Treatments

Production of Ni-Doped SiC Nanopowders and their Dielectric Properties

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