Interaction of p-type dopants during diffusion in InP

Abstract

Experiments are described in which zinc and cadmium diffuse together in InP and interact. When zinc is diffused into cadmium-doped InP, it is found that (1) the presence of cadmium increases the penetration depth of the zinc and (2) the presence of the diffusing zinc greatly increases the rate of out-diffusion of cadmium from the semiconductor. A model is proposed to explain this behaviour. It is suggested that both elements diffuse by a substitutional-interstitial mechanism and that the interaction between them is a consequence of both influencing the local concentration of holes. Simulations made using the model show good agreement with experiment.

The strange diffusivity of Ag atoms in CdTe

“…It should be remarked that the diffusion of Cu and Ag in CdTe observed here might show up some similarities with the interaction of p-type dopants, i.e. of Zn and Cd, in InP reported by Tuck et al [11]. In that experiment, the presence of Cd was found to increase the diffusion depth of Zn but, contrary to the present data, the presence of the diffusing Zn greatly increased the rate of out-diffusion of Cd from the semiconductor.…”

Avatar, Dark Green Religion: and the Technological Construction of Nature

“…We might not know exactly how the spectacle has been achieved, but in principle we know that we could.' 14 As we watch Avatar, in knowing the natural world of Pandora is computer generated, our ability to engage If Avatar fits in the theme of augmentation, we must think about the implications of these augmentations. What does it mean to 'see' in stereoscopic 3D?…”