Utilization of the N,C,N‐chelating ligand L (L={2,6‐(Me2NCH2)2C6H3}−) in the chemistry of 13 group elements provided either N→In coordinated monomeric chalcogenides LIn(μ‐E4) (E=S, Se) with unprecedented InE4 inorganic ring or monomeric chalcogenolates LM(EPh)2 (M=Ga, In). Complex LGa(SePh)2 was selected as the most suitable single source precursor (SSP) for the deposition of amorphous semiconducting GaSe thin films using spin coating method.