Interband cascade laser operating to 269 K at λ=4.05 µm

Interband Cascade Lasers with Wavelengths Spanning 2.9 μm to 5.2 μm

“…This is well above the best previously reported result (T cw max = 269 K) 6 for an interband semiconductor laser emitting at k ‡ 3.2 lm. The narrowridge ICL fabricated from wafer D operated cw to 229 K at k = 5.1 lm, which compares to the best earlier result of 165 K for an interband device emitting beyond 5 lm.…”

“…4 There have also been significant improvements in the high-temperature performance, with the maximum cw operating temperatures steadily rising and threshold current densities gradually falling. 5,6 In this work we discuss the detailed pulsed characterization of four ICLs operating at a variety of wavelengths, which taken together span the entire mid-IR spectral band. Whereas many of our previous studies have focused on ICLs with a fixed spectral target, so as to avoid wavelengthdependent considerations, here the goal is to determine whether the promising performance that has recently been observed can be extended to shorter and longer wavelengths.…”

Midinfrared GaInSb∕AlGaInSb quantum well laser diodes grown on GaAs

“…13 Extrapolating the fit to the high-temperature data yields an estimated threshold current density of ϳ6.5 kA/ cm 2 at room temperature. Although this is larger than the value of 660 A / cm 2 obtained recently from an ICL at 269 K, 10 and emitting at 4.05 m, Andreev et al 12 predicted that the threshold current density will fall by a factor of ϳ10 at room temperature as the strain in the QW active region of the GaInSb/ AlGaInSb lasers is increased to approximately 1.5%. Further experiments are therefore underway examining the effect of strain on the laser performance.…”

“…4͒ and lattice matched InGaAs/ AlAsSb, 5 only one QCL operating continuous wave ͑cw͒ at room temperature and at wavelengths below 4.0 m has been reported. 6 The longest wavelength for room temperature cw operation for a type I interband diode is ϳ3.1 m, 7 whereas maximum cw operating temperatures of 264, 8 257, 9 and finally 269 K, 10 at emission wavelengths of 3.3, 3.7, and 4.05 m, respectively, have been achieved recently by interband cascade lasers ͑ICLs͒, which have also achieved cw power outputs above 1 W at 78 K. 11 The aluminum-indium-gallium-antimonide ͑Al x Ga y In 1−x−y Sb͒ material system offers great promise for efficient diode laser operation across the 3 -5 m wavelength range. It offers an excellent compromise between the requirements for good electronic and optical confinement and those for low series resistance, and the use of an active region comprising compressively strained type I quantum wells is predicted to lead to increased gain, which leads to lower threshold current densities and hence reduced nonradiative Auger recombination.…”

High-temperature interband cascade lasers emitting at λ=3.6–4.3μm

“…Recent ICLs have achieved maximum cw operating temperatures of 264, 9 257, 10 and finally 269 K, 11 at emission wavelengths of 3.3, 3.7, and 4.05 m, respectively. In the present work, we describe the pulsed and cw operating characteristics, cw wall plug efficiencies ͑WPEs͒, and far-field characteristics of ICLs from the same wafer that yielded the highest cw lasing temperature reported to date, 11 along with the properties of devices from a companion wafer whose performance is almost as good at 200 nm longer wavelength.…”