Interband critical point parameters determined by ellipsometry in ZnxHg1−xSe

Kumazaki, K.; Viña, L.; Umbach, C. P.; Cardona, M.

doi:10.1016/0038-1098(88)90209-8

Cited by 9 publications

(13 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(1) The values of a, 6, and c for CdHgSe are listed in Table 1 together with those of CdHgSe calculated from the peak positions of reflection spectra [4] and those obtained from ellipsometric measurements for ZnHgSe [8] and CdHgTe [9].…”

Section: Resultsmentioning

confidence: 99%

“…3 as a function of x. The crosses and triangles denote the broadening parameters taken from the ellipsometric data of ZnHgSe large difference may be due to surface effects [8] originating from the following mechanisms.…”

Section: Resultsmentioning

confidence: 99%

“…3 as a function of x. The crosses and triangles denote the broadening parameters taken from the ellipsometric data of ZnHgSe [8]. The dashed lines are drawn through the experimental points only to visualize the dependence on composition.…”

Section: Resultsmentioning

confidence: 99%

“…Recently the composition dependence of El and El + A, gaps and A, spin-orbit splitting of Zn,Hg,-,Se (ZnHgSe) [8] and Cd,Hgl-,Te (CdHgTe) [9] was measured by ellipsometry a t room temperature. The broadening of the critical points are also discussed by alloying effects.…”

Section: Introductionmentioning

confidence: 99%

“…[8]. The dashed lines are drawn through the experimental points only to visualize the dependence on composition.…”

mentioning

confidence: 99%

See 4 more Smart Citations

Interband Critical Point Parameters Determined by Ellipsometry in Cd_xHg_1−xSe

Kumazaki

Viña

Umbach

et al. 1989

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

a), L. V1RA3) (b), c. uMBACH4) (b), and M. CARDONA (b)The dielectric function of ChHgl -,Se crystals, with z = 0 to 0.30, is measured by ellipsometry at room temperature between 1.8 and 5.5 eV. The El and El + A , gaps and the A , spin-orbit splitting show a upwards quadratic dependence on composition. The broadening of the observed structures increases with x due to alloying effects and disorder or to the difference in chemical activity of the surfaces. The results are discussed in comparison with those obtained for Zn,Hgl-,Se and Cd,Hgl -,Te.Die dieelektrische Funktion von Cd,Hgl -,Se-Kristallen mit x = 0 bis 0,30 wird mittels Ellipsometrie bei Raumtemperatur im Bereich von 1,s bis 5,5 eV gemessen. Die Elund El. + A,-Lucke sowie die A,-Spin-Bahnaufspaltung zeigen eine steigende quadratische Abhkngigkeit von der Zuaammensetzung. Die Verbreiterung der beobachteten Strukturen nimmt mit x infolge der Legierungseinfliisse und Fehlordnung oder infolge der Differenz der chemischen Aktivitit der Oberflichen zu. Die Ergebnisse werden im Vergleich zu denen an Zn,Hgl -,Se und Cd,Hgl -,Te erhaltenen diskutiert. l ) 419-2 Teine-Maeda, Nishi-ku, Sapporo 006, Japan. 2,

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…[8]. The dashed lines are drawn through the experimental points only to visualize the dependence on composition.…”

mentioning

confidence: 99%

See 3 more Smart Citations

Interband Critical Point Parameters Determined by Ellipsometry in Cd_xHg_1−xSe

Kumazaki

Viña

Umbach

et al. 1989

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

show abstract

Resonant Raman Scattering near E₁ + Δ₁ in Cd_xHg_1−xSe

Kumazaki

1989

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

Resonant Raman Scattering near El + dl in Cd,Hgl-,Se BY K . KUMAZAKIRaman scattering by phonons is measured in Cd,Hgl -,$e with 5 = 0 to 0.3 on (loo), (110) and (111) surfaces near the El + A, energy gap a t room temperature. From these measurements, the composition dependence of the HgSe-like TO and LO mode frequencies is obtained. The plasmon-LO phonon coupled modes and a cluster mode are also observed. Effective high-frequency dielectric constants calculated by the extended Lyddane-Sachs-Teller relation show a discontinuity near the semimetal-semiconductor transition point. This discontinuity is attributed to the contribution of interband terms to the dielectric function. The results obtained from the Raman measurements are compared with those from far-infrared measurements. Raman-Streuung durch

show abstract