Interconnect Quality and Reliability of 3D Packaging

Wang, Yaodong; Liu, Y.; Li, Menglu; Tu, King‐Ning; Xu, Luhua

doi:10.1007/978-3-319-44586-1_14

Cited by 9 publications

(3 citation statements)

References 76 publications

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“…Hardware modifications can occupy a layer below the entire software stack, enabling malicious circuits to bypass traditional defensive techniques. 86 In 2008 at the University of Illinois at Urbana-Champaign, researchers designed a small backdoor circuit that gave access to privileged regions of chip memory. This was accomplished via including a login backdoor based on hardware that gives an attacker complete and high-level access to the machine.…”

Section: Transistor and Gate Level Threatsmentioning

confidence: 99%

“…A beginner's level introduction to IC packaging has been compiled by Lancaster and Keswani, 137 while FA techniques for 3D packaging were reviewed by Altmann and Petzold, 138 Li et al, 139 and De Wolf et al 140 Interconnect quality and reliability for 3D IC packages were reviewed as part of Springer's "Series in Advanced Microelectronics" book covering microstructure changes and failures driven by mechanical, electro, and thermal stresses, which are important as many modern mobile devices fail due to high frequency impacts with the ground. 86 Although there are many non-THz-based inspection methods for ICs, it is difficult to reduce the processing time of assessment and interpretation of signals for many IC NDT. These issues should be addressed for the development of an effective in-line inspection system.…”

Section: Ic Designmentioning

confidence: 99%

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Review of THz-based semiconductor assurance

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Jessurun

et al. 2021

Opt. Eng.

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Terahertz radiation for inspection and fault detection has been of interest for the semiconductor industry since the first generation and detection of THz signals. Until recent hardware advances, THz systems lacked the signal quality and reliability for use as an effective nondestructive testing (NDT) method. Incremental advances in THz sources, detectors, and signal processing resulted in the successful applied-industrial use of THz NDT techniques on carbon fiber laminates, automotive coatings, and for detection of counterfeit pharmaceutical tablets. Semiconductor inspection and verification methods ensure the functionality and thereby safety of vital electronics for several critical industries. For this reason, the reliability and verification of a THz NDT method must exceed currently used inspection systems. With recent laboratory access to THz radiation, THz inspection methods are often compared with existing optical, electrical, and volumetric semiconductor verification techniques for their production monitoring and failure analysis viability. This review will cover THz techniques and their applications at the printed circuit board (PCB), integrated circuit (IC), and transistor/gate scales. The THz radiation gap spans between optical and electronic ranges with a millimeter-sized wavelength allowing for adequate penetration of plastic and ceramic and semiconductor materials. THz radiation can be used to determine structural features, electrical signatures in the THz range, and chemical information simultaneously. Cost and environmental limitations restricted the ability for THz NDT semiconductor inspection methods to escape the lab and succeed in the dynamic environment of a semiconductor fabrication environment. Hybridized metrology methods incorporating information from multiple inspection tools are a regime where THz spectral and structural data can be combined with existing methods such as optical, x-ray, or E-beam. THz can be used initially to offer support to the complex failure analysis and verification requirements of the semiconductor industry from nanoscale to macroscale features and components. For THz systems to become independent inspection tools used for semiconductor production monitoring, in the lab or fab, this will require a confident level of statistical process control for THz signal generation, detection, or processing. Applied industrial semiconductor device inspection will likely be a result of a combination of research into THz hardware, reconstruction techniques, and the widespread application of machine learning techniques. Many breakthroughs occurred over the years to enable successful nondestructive characterization and inspection of semiconductor devices from the nanoscale transistors to fully packaged integrated circuits and assembled PCBs.

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Section: Transistor and Gate Level Threatsmentioning

confidence: 99%

Section: Ic Designmentioning

confidence: 99%

Review of THz-based semiconductor assurance

True

Jessurun

et al. 2021

Opt. Eng.

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“…Micro solder-joints in 3D TSV packaging are commonly subjected to mechanical loading during serving [11]. It was well documented that the interfacial IMCs play an important role in the joint reliability because of their different mechanical properties [12,13].…”

Section: Introductionmentioning

confidence: 99%

IMCs Microstructure Evolution Dependence of Mechanical Properties for Ni/Sn/Ni Micro Solder-Joints

et al. 2020

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The current miniaturization trend of microelectronic devices drives the size of solder joints to continually scale down. The miniaturized joints considerably increase intermetallic compounds (IMCs) volume fraction to trigger mechanical reliability issues. This study investigated precise relationships between varying IMC volumes and mechanical properties of Ni/Sn(20μm)/Ni micro-joints. A designed method that followed the IMC volume as the only variable was used to prepare micro-joint samples with different IMC volumes. The continuously thickened Ni3Sn4 IMCs exhibited a noticeable morphology evolution from rod-like to chunky shape. The subsequent tensile tests showed unexpected tensile strength responses as increasing Ni3Sn4 volume, which was strongly associated with the Ni3Sn4 morphological evolutions. Fractographic analysis displayed that the ductile fracture dominates the 20%–40% IMC micro-joints, whereas the brittle fracture governs the 40%–80% IMC micro-joints. For the ductile fracture-dominated joints, an abnormal reduction in strength occurred as increasing IMCs volume from 20% to 40%. This is primarily due to severe stress concentrations caused by the transformed long rod-typed morphology of the Ni3Sn4. For the brittle fracture-dominated joints, the strength appeared a monotonous increase as the Ni3Sn4 volume increased. This may be attributed to the increased crack resistance resulting from continuous coarsening of the chunky Ni3Sn4 without any voids. Moreover, the finite element analysis was provided to further understand the joint failure mechanisms.

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Multi-chip Modules and Multi-chip Packaging

Božanić

Sinha

2019

Smart Sensors, Measurement and Instrumentation

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Interconnect Quality and Reliability of 3D Packaging

Cited by 9 publications

References 76 publications

Review of THz-based semiconductor assurance

Review of THz-based semiconductor assurance

IMCs Microstructure Evolution Dependence of Mechanical Properties for Ni/Sn/Ni Micro Solder-Joints

Multi-chip Modules and Multi-chip Packaging

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