Eighteen
new quaternary chalcogenides AGaM′Q
4 (A
+ = K+, Rb+, Cs+, Tl+; M′4+ = Ge4+, Sn4+; Q
2– = S2–,
Se2–) have been prepared by solid-state syntheses
and structurally characterized using single-crystal X-ray diffraction
techniques. These new phases crystallize in a variety of layered structure
types. The tin analogues also adopt an extended three-dimensional
network structure as polymorphs. The polymorphism and phase-stability
in these cases were studied by thermal analysis and high-temperature
in situ X-ray powder diffraction. All compounds are semiconductors
with the colored selenides absorbing light in the infrared-green region
(1.8 eV < E
g < 2.3 eV) and the mostly
white sulfides absorbing light in the blue-ultraviolet range (2.5
eV < E
g < 3.6 eV). Based on third-harmonic
generation (THG) measurements, the third-order nonlinear optical (NLO)
susceptibilities χ(3) of the new and previously reported AGaM′Q
4 compounds were determined. These measurements revealed an apparent
correlation between the THG response of the sample and its band gap,
rather than the crystal structure type. While low-gap materials possess
higher nonlinearity in general, we found that layered orthorhombic
RbGaGeS4 exhibits an impressive χ(3) value
(about four times larger than that of AgGaS2) even with
a large band gap and shows stability under ambient conditions with
no significant irradiation damage.