Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy

PL of low‐density InAs/GaAs quantum dots with different bimodal populations

“…Under these conditions, the In atoms have a long migration length and thereafter preferentially incorporate into existing QDs rather than forming new SQDs. This has been observed previously in the AFM of similarly grown QD samples [21][22][23][24]. For these low-density InAs QDs, the average distance between neighbouring QDs is estimated to be ∼125 nm, almost double of the average QD diameter.…”

Correlation of crystal structure and optical properties of Ba0.97Nd0.0267Ti(1-x)WxO3 perovskite

“…53 The E a values are lower, which can be explained by the nonradiative transition and the good thermal stability of both samples. 54 It is worth pointing out that the thermal activation energies for both samples are close to the phonon energy. Increasing the W 6+ concentration in the host lattice led to a signicant change of the optical properties and is explained by structural distortion and other parameters such as grain size.…”

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

“…Figure 4 shows the PL spectrum of the active region in the InAs/InGaAs/GaAs QD heterostructure with an excitation power of 100 mW at low temperature (12 K). Obviously, the spectrum presents an asymmetric shape located at the high-energy side and which can be deconvoluted in two sub-bands by Gaussian fitting [ 14 ]. Considering the dependence of the quantum confinement potentials on the dot size, the most intense peak located at 1.06 eV is attributed to the emission from the ground states of larger QDs (LQDs), while the higher energy peak at 1.11 eV refers to the emission from the ground states of smaller QDs (SQDs) [ 15 ].…”