Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg3Sb1.5Bi0.5‐Based Thermoelectric Generation Devices

Wu, Xinzhi; Lin, Yangjian; Han, Zhijia; Li, Huan; Liu, Chengyan; Wang, Yupeng; Zhang, Pengxiang; Zhu, Kang; Jiang, Feng; Huang, Jian; Fan, Haohan; Cheng, Feng; Ge, Binghui; Liu, Weishu

doi:10.1002/aenm.202203039

Cited by 35 publications

(32 citation statements)

References 52 publications

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“…More details on the equipment can be found in our previous work. [55] The theoretical conversion efficiency was simulated in the COMSOL Multiphysics software.…”

Section: Methodsmentioning

confidence: 99%

Bi‐Deficiency Leading to High‐Performance in Mg₃(Sb,Bi)₂‐Based Thermoelectric Materials

Liu

et al. 2023

Advanced Materials

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Mg3(Sb,Bi)2 is a potential nearly‐room temperature thermoelectric compound composed of earth‐abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (VMg) in Mg3(Sb,Bi)2. This study proposes an approach to mitigating the negative scattering effect of VMg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and Cs‐corrected scanning transmission electron microscopy analyses indicated that the VMg tends to coalesce due to the introduced Bi vacancies (VBi). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic VMg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at ∆T = 473 K are achieved in the optimized composition of Mg3(Sb,Bi)2 by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg3(Sb,Bi)2 as an emerging thermoelectric material.

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“…More details on the equipment can be found in our previous work. [55] The theoretical conversion efficiency was simulated in the COMSOL Multiphysics software.…”

Section: Methodsmentioning

confidence: 99%

Bi‐Deficiency Leading to High‐Performance in Mg₃(Sb,Bi)₂‐Based Thermoelectric Materials

Liu

et al. 2023

Advanced Materials

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“…This effective coating strategy has been applied to improve the long-term stability of modules by coating with BN or Mg-Mn alloy. [77,78]…”

Section: Realizing the Superior Thermoelectric Performance And Conver...mentioning

confidence: 99%

Realizing High Thermoelectric Performance in N‐Type Mg₃(Sb, Bi)₂‐Based Materials via Synergetic Mo Addition and Sb–Bi Ratio Refining

Wang

Sato

Peng

et al. 2023

Advanced Energy Materials

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Developing thermoelectric (TE) performance is impeded by the compromise of TE parameters, resulting in inadequate conversion efficiency of heat to electricity. Herein, this work reports that Mo is a particularly effective additive in Mg3Sb2‐based alloys with significantly improved electronic transport via grain‐boundary engineering and band‐structure regulation synergy. In addition, phonon transport is simultaneously suppressed by employing multiple effects, lattice imperfection scattering, reduced phonon group velocity, and enhanced atomic disorder, leading to a minimum κlat = 0.52 W m−1 K−1 at 723 K. As a result, an outstanding ZT peak of ≈1.84 at 723 K and ZTav = 1.34 within 323–723 K are achieved in Mg3Sb2‐based alloys, and the corresponding fabricated single‐leg TE module shows an exceptionally high conversion efficiency of ≈12% under a hot‐side temperature of 450 °C. These results demonstrate the great potential for advancing mid‐temperature heat harvesting in Mg3Sb2‐based materials.

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“…The stability of the interface was further examined by evaluating the microstructure upon in situ heating, which provided more understanding. [64,65] A well-bonded Cu 2 MgFe/Mg 2 Sn 0.75 Ge 0.25 interface is demonstrated in Figure 3a, which had no microcracks, rare Kirkendall voids, and minimal element interdiffusion. The distinct diffusion depth for element Sn was only hundreds of nanometers, which was lower than that reported for other TEiMs in the literature.…”

Section: Microstructure and Performance Of Teim/tecm Interfacementioning

confidence: 99%

Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg₂Sn_0.75Ge_0.25‐Based Thermoelectric Devices

Lin

Liu

et al. 2023

Advanced Energy Materials

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Electrode contact interfaces for practical thermoelectric (TE) devices require high bonding strength, low specific contact resistivity, and superb stability. Herein, the state‐of‐the‐art Cu2MgFe/Mg2Sn0.75Ge0.25 interface is designed for Mg2Sn0.75Ge0.25‐based TE devices, adhering to the general strategy of high bonding propensity, thermal expansion matching, diffusion passivation, and dopant inactivation. The interfacial stability is verified by the in situ transmission electron microscopy analysis, thereby confirming the contributions from decreasing the chemical potential gradient and increasing the diffusion activation energy barrier. The single‐leg device exhibits a high power density (ωmax) of 2.6 W cm−2 and conversion efficiency (ηmax) of 8% under a temperature difference (ΔT) of 370 °C, which is the record‐breaking value in comparison to other Mg2(Si, Ge, Sn)‐based TE devices. Additionally, a two‐couple device with p‐type Bi2Te3 shows an excellent ωmax of 1.3 W cm−2 and ηmax of 5.4% under a ΔT of 270 °C, comparable to commercial Bi2Te3 devices. The proposed interface design strategy provides a general technique for constructing high‐performance devices using cutting‐edge TE materials.

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Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg₃Sb_1.5Bi_0.5‐Based Thermoelectric Generation Devices

Cited by 35 publications

References 52 publications

Bi‐Deficiency Leading to High‐Performance in Mg₃(Sb,Bi)₂‐Based Thermoelectric Materials

Bi‐Deficiency Leading to High‐Performance in Mg₃(Sb,Bi)₂‐Based Thermoelectric Materials

Realizing High Thermoelectric Performance in N‐Type Mg₃(Sb, Bi)₂‐Based Materials via Synergetic Mo Addition and Sb–Bi Ratio Refining

Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg₂Sn_0.75Ge_0.25‐Based Thermoelectric Devices

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Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg3Sb1.5Bi0.5‐Based Thermoelectric Generation Devices

Cited by 35 publications

References 52 publications

Bi‐Deficiency Leading to High‐Performance in Mg3(Sb,Bi)2‐Based Thermoelectric Materials

Bi‐Deficiency Leading to High‐Performance in Mg3(Sb,Bi)2‐Based Thermoelectric Materials

Realizing High Thermoelectric Performance in N‐Type Mg3(Sb, Bi)2‐Based Materials via Synergetic Mo Addition and Sb–Bi Ratio Refining

Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg2Sn0.75Ge0.25‐Based Thermoelectric Devices

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Product

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Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg₃Sb_1.5Bi_0.5‐Based Thermoelectric Generation Devices

Bi‐Deficiency Leading to High‐Performance in Mg₃(Sb,Bi)₂‐Based Thermoelectric Materials

Bi‐Deficiency Leading to High‐Performance in Mg₃(Sb,Bi)₂‐Based Thermoelectric Materials

Realizing High Thermoelectric Performance in N‐Type Mg₃(Sb, Bi)₂‐Based Materials via Synergetic Mo Addition and Sb–Bi Ratio Refining

Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg₂Sn_0.75Ge_0.25‐Based Thermoelectric Devices