Interface and transport properties of gamma irradiated Au/n-GaP Schottky diode

Shiwakoti, N.; Bobby, A.; Asokan, K.; Antony, Bobby

doi:10.1016/j.mssp.2017.10.008

Cited by 15 publications

(4 citation statements)

References 44 publications

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“…This behavior became more prominent for the sample with a 7.4-nm-thick AlN. The increase in conductance with increasing the frequency was associated with the recombination centers promoting recombination current in the depletion region and the interface states providing charging and discharging current or hopping conduction process occurring at high frequency [ 32 ]. The results, therefore, indicate that interface states with various time constants are present for all the samples, and the presence of such defects are most significant for the sample with a 7.4-nm-thick AlN.…”

Section: Resultsmentioning

confidence: 99%

Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN

2018

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The interfacial and electrical properties of atomic layer deposited AlN on n-GaN with different AlN thicknesses were investigated. According to capacitance–voltage (C–V) characteristics, the sample with a 7.4-nm-thick AlN showed the highest interface and oxide trap densities. When the AlN thickness was 0.7 nm, X-ray photoelectron spectroscopy (XPS) spectra showed the dominant peak associated with Al–O bonds, along with no clear AlN peak. The amount of remained oxygen atoms near the GaN surface was found to decrease for the thicker AlN. However, many oxygen atoms were present across the AlN layer, provided the oxygen-related defects, which eventually increased the interface state density. The barrier inhomogeneity with thermionic emission (TE) model was appropriate to explain the forward bias current for the sample with a 7.4-nm-thick AlN, which was not proper for the sample with a 0.7-nm-thick AlN. The reverse leakage currents for both the samples with 0.7- and 7.4-nm-thick AlN were explained better using Fowler–Nordheim (FN) rather than Poole–Frenkel emissions.

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Section: Resultsmentioning

confidence: 99%

Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN

2018

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“…The ideality factor and the Schottky barrier height are main parameters for gate-ch of InP-based HEMTs. According to the thermionic-emission model, the ideality factor and the Schottky barrier height can be obtained from the slope and intercept of Ln I-V plot, the equations can be written as: [23][24][25] ,…”

Section: Resultsmentioning

confidence: 99%

“…However, Φ B had a little change for both devices. The interface states introduced by electron irradiation could be considered to be the reason for the change of n [24,25]. with different gate width before and after electron irradiation.…”

Section: Resultsmentioning

confidence: 99%

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2021

JOR

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In this paper, the influence of electron irradiation on DC and RF characteristics of InP-based HEMTs with different gate widths were studied by irradiation experiment. The results show that the value of channel current (I DS ) and transconductance (g m ) are decreased for device with different gate width after electron irradiation, which is mainly due to the reduction of mobility in the channel by the irradiation-induced defects. However, the carrier concentration in the channel has a little change. Compared with the device with 100 μm gate width, I DS and g m of the device with 40 μm gate width were decreased by 1.5% and 3%.Meanwhile, the forward gate current decreased due to the increase of series resistance of gate contact caused by electron irradiation. The interface defects induced by electron irradiation induced the increase of the reverse gate current. Additionally, the current gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) were reduced by 19.8% and 10.9% for device with 40 μm gate width, and the f T and f max were only reduced by 7.1% and 8.2% for device with 100 μm gate width. The experimental results indicate that designing a reasonable structure is an effective method to enhance the radiation resistance in InP-based HEMTs, and this method can also be utilized in other semiconductor devices.

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“…The following supporting information can be downloaded at : Figure S1: Schematic of an enclosure that was used during the MW-PECVD process to prevent direct plasma effects; Figure S2: AFM image (a), AFM phase image (b), and height profile (c) of A1 sample; Figure S3: AFM image (a), AFM phase image (b), and height profile (c) of A7 sample; Figure S4: AFM image (a), AFM phase image (b), and height profile (c) of A8 sample; Figure S5: AFM image (a), AFM phase image (b), and height profile (c) of A11 sample; Figure S6: AFM image (a), AFM phase image (b), and height profile (c) of B1 sample; Figure S7: AFM image (a), AFM phase image (b), and height profile (c) of B2 sample; Figure S8: AFM image (a), AFM phase image (b), and height profile (c) of B3 sample; Figure S9: AFM image (a), AFM phase image (b), and height profile (c) of C2 sample; Figure S10: AFM image (a), AFM phase image (b), and height profile (c) of C3 sample; Figure S11: FWHMG vs. ID/IG (a) and FWHMG vs. PosG (b) plots; Figure S12: I-V characteristic parameters: (a,d) IR(0.3 V); (b,e) IR(0.1 V)/IF(0.1 V); (c,f) IR(0.3 V)/IF(0.3 V); in relation with (a-c) I2D/IG; (d-f) ID/IG; Figure S13: I-V characteristic parameters: (a) IR(0.3 V); (b) IR(0.3 V)/IF(0.3 V) in relation with surface roughness; Figure S14: ISC vs. ID/IG (a) and UOC vs. ID/IG (b) plots showing a difference between devices measured at 800 nm illumination (solid) and 406 nm illumination (hollow); Figure S15: UOC vs. PosG plot; Figure S16: ISC (a,c) and UOC (b,d) relation with respect to ID/IG (a,b) and FWHM2D (c,d) under 800 nm illumination; Figure S17: ISC (a) and UOC (b) and sample roughness relation under 800 nm illumination; Figure S18: Diode I-V and UOC (at 800 nm illumination) relation; Figure S19: Different charge transport mechanisms estimated from typical fabricated diode I-V graphs under various thermal conditions: (a) Poole–Frenkel mechanism; (b) Image-force-induced charge transport; (c) Thermionic emission; Figure S20: Diode operating regimes in terms of temperature: (a) typical I-V characteristics measured in the dark at different temperatures (253–313 K); (b) The Arrhenius plot; (c) ln(σ/T2) vs. 1000/T plot; Table S1: Summarized benchmark showing PCE values and PCE enhancement techniques of the CVD-synthesized graphene/Si solar cells investigated by different research groups; Table S2: Probable doping and strain effects governing main graphene’s Raman peak (G, 2D) positions and their FWHM; Table S3: Hydrogen plasma pre-treatment effects on Si(100) substrate surface. References [ 115 , 116 , 117 , 118 , 119 , 120 , 121 , 122 , 123 , 124 , 125 ] are cited in the Supplementary Materials.…”

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confidence: 99%

The Graphene Structure’s Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes

et al. 2022

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Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current–voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO2 interlayer at the graphene/Si junction. It was the prevalent cause of the significant decrease in the reverse current and short-circuit current. No photovoltaic effect dependence on the graphene roughness and work function could be observed.

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Interface and transport properties of gamma irradiated Au/n-GaP Schottky diode

Cited by 15 publications

References 44 publications

Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN

Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN

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The Graphene Structure’s Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes

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