Interface composition dependence of the band offset in InAs/GaSb

Daly, Morgan; Symons, D.M.; Lakrimi, M.; Nicholas, R. J.; Mason, Nigel J.; Walker, P.J.

doi:10.1088/0268-1242/11/5/001

Cited by 15 publications

(3 citation statements)

References 17 publications

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“…Another study by the same group produced an average offset of 0.54 eV. 898 Wang et al found a 90 meV variation of the VBO based on growth sequence ͑InAs on GaSb versus GaSb on InAs͒. 899 Next, we discuss a previously unpublished application of the second approach.…”

Section: F Gasbõinasõalsbmentioning

confidence: 92%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,674

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Section: F Gasbõinasõalsbmentioning

confidence: 92%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,674

289

3,822

View full text Add to dashboard Cite

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“…However, several studies show that stoichiometry of their interfaces strongly influences both structural and optoelectronic properties. [2][3][4] Consequently, optimizing these properties through precise tailoring of interface composition has received much attention. 5,6 A key requirement in such efforts is the capability to accurately quantify interface stoichiometry.…”

mentioning

confidence: 99%

Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution

Mahalingam

Eyink

Brown

et al. 2006

Applied Physics Letters

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Employing the focal-series reconstruction technique in high-resolution transmission electron microscopy, we obtained true atomic resolution images of interfacial disorder within cation and anion sublattices across interfaces in an InGaSb∕InAs heterostructure. This enabled independent quantitative mapping of changes in the In–Ga and As–Sb contents across interfacial regions ∼0.6nm in width. A comparison of the cation and anion sublattice images revealed that intermixing at the InGaSb-on-InAs interface is confined to the In–Ga sublattice. Also, atomic scale roughness within the As–Sb sublattice of the InAs-on-InGaSb interface was discerned. This approach is general, permitting atomic-scale compositional analysis of heterointerfaces with two species per sublattice.

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“…In all cases, the modelling is strongly dependent on the value taken for the band overlap, which is believed to lie in the range 125-155meV and is dependent on the interface bonding 18 . None of the reports in the literature include the effects of strain on the heavy and light-hole valence band edges, which we believe to be significant.…”

Section: Introductionmentioning

confidence: 99%

Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies

et al. 2002

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We have measured the current-voltage (I-V) of type II InAs/GaSb/InAs double heterojunctions (DHETs) with 'GaAs like' interface bonding and GaSb thickness between 0-1200Å. A negative differential resistance (NDR) is observed for all DHETs with GaSb thickness > 60Å below which a dramatic change in the shape of the I-V and a marked hysteresis is observed. The temperature dependence of the I-V is found to be very strong below this critical GaSb thickness. The I-V characteristics of selected DHETs are also presented under hydrostatic pressures up to 11 kbar. Finally, a mid infra-red electroluminescence is observed at 1 bar with a threshold at the NDR valley bias. The band profile calculations presented in the analysis are markedly different to those given in the literature, and arise due to the positive charge that it is argued will build up in the GaSb layer under bias. We conclude that the dominant conduction mechanism in DHETs is most likely to arise out of an inelastic electron-heavy-hole interaction similar to that observed in single heterojunctions (SHETs) with 'GaAs like' interface bonding, and not out of resonant electron-light-hole tunnelling as proposed by Yu et al. A Zener tunnelling mechanism is shown to contribute to the background current beyond NDR.

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Interface composition dependence of the band offset in InAs/GaSb

Cited by 15 publications

References 17 publications

Band parameters for III–V compound semiconductors and their alloys

Band parameters for III–V compound semiconductors and their alloys

Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution

Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies

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