Interface contributions to spin relaxation in a short-period InAs/GaSb superlattice

Olesberg, J. T.; Lau, Wayne H.; Flatté, Michael E.; Yu, Chung Huang; Altunkaya, E.; Shaw, E.; Hasenberg, T. C.; Boggess, Thomas F.

doi:10.1103/physrevb.64.201301

Cited by 42 publications

(45 citation statements)

References 17 publications

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“…9 Hence the interface inversion asymmetry does not contribute. By comparing the spin relaxation in InAs/GaSb quantum wells with different growth directions, with the help of theoretical calculation, it was found that the interface inversion asymmetry plays an important role in narrow InAs/GaSb quantum wells [221,222].…”

Section: Spin-orbit Coupling In Nanostructures Due To Interface Invermentioning

confidence: 99%

Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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Section: Spin-orbit Coupling In Nanostructures Due To Interface Invermentioning

confidence: 99%

Spin dynamics in semiconductors

2010

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“…[ 29 ] It has been suggested theoretically that intrinsic inversion symmetry breaking at the interfaces of a quantum well can decrease spin relaxation time by over an order of magnitude. [ 30 ] The calculated spin relaxation time in InAs/GaSb quantum wells is only 0.9 ps. [ 30 ] In InSb nanowires of 50 nm diameter, we will expect the spin relaxation time to be even shorter than in quantum wells because of the larger interface-to-volume ratio, and hence shorter than 1 ps at room temperature.…”

Section: Hanle Effectmentioning

confidence: 99%

“…[ 30 ] The calculated spin relaxation time in InAs/GaSb quantum wells is only 0.9 ps. [ 30 ] In InSb nanowires of 50 nm diameter, we will expect the spin relaxation time to be even shorter than in quantum wells because of the larger interface-to-volume ratio, and hence shorter than 1 ps at room temperature. Therefore, the measured relaxation times of 13 and 8 ps are roughly an order of magnitude longer than what is expected.…”

Section: Hanle Effectmentioning

confidence: 99%

Coherent Spin Transport and Suppression of Spin Relaxation in InSb Nanowires with Single Subband Occupancy at Room Temperature

Bandyopadhyay

Hossain

Ahmad

et al. 2014

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A longstanding goal of spintronics is to inject, then coherently transport, and finally detect electron spins in a semiconductor nanowire in which a single quantized subband is occupied by the electrons at room temperature. Here, the achieving of this goal in electrochemically self-assembled 50-nm diameter InSb nanowires is reported and substantiated by demonstrating both the spin-valve effect and the Hanle effect. Observing both effects in the same sample allows one to estimate the electron mobility and the spin relaxation time in the nanowires. It is found that despite four orders of magnitude degradation in the mobility compared to bulk or quantum wells and a resulting four orders of magnitude increase in the Elliott-Yafet spin relaxation rate, the spin relaxation time in the nanowires is still about an order of magnitude longer than what has been reported in bulk and quantum wells. This is caused by the elimination or suppression of the D'yakonov-Perel' spin relaxation through single subband occupancy. These experiments shed light on the nature of spin transport in a true quantum wire and raise hopes for the realization of a room-temperature Datta-Das spin transistor, where single subband occupancy is critical for optimum performance.

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“…It is by now well known that these interfaces strongly influence important physical properties, such as the band gap and absorption spectrum [3] and the electron spin relaxation time [4]. Moreover, recent investigations [5] of the quaternary alloy GaInAsSb heterostructures have shown that interface recombination dominates in high-quality structures.…”

Section: Recommendationsmentioning

confidence: 99%

Electronic, Optical and Structural Properties of 6.1 Angstrom III-V Semiconductor Heterostructures for High-Performance Mid-Infrared Lasers

Boggess¹

2003

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REPORT DOCUMENTATION PAGEForm Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. (From -To) REPORT DATE (DD-MM-YYYY) December 2003 REPORT TYPE Final Report DATES COVERED PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)The University of Iowa Division of Sponsored Programs PERFORMING ORGANIZATION REPORT NUMBER2 Gilmore Hall Iowa City, IA 52242 SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S) SPONSOR/MONITOR'S REPORTAFRL/DELS 3550 Aberdeen Ave SE Kirtland AFB NM 87117-5776 NUMBER(S) AFRL-DE-PS-TR-2004-1002 DISTRIBUTION / AVAILABILITY STATEMENTApproved for Public Release; Distribution is Unlimited SUPPLEMENTARY NOTES ABSTRACTThe goal of this program was to develop new insight into the physics of 6.1-angstrom heterostructures through combined experiment and theoretical efforts. Specifically, time-resolved ultrafast optical and scanning-tunneling microscopy (STM) experimental techniques were used to study the electronic, optical, and structural properties.15. SUBJECT TERMS 6.1 angstrom semiconductors, antimonides, mid-IR semiconductor lasers, photoluminescence upconversion, scanning-tunneling microscopy. The scope of this project has been substantially reduced, relative to that originally proposed, due to a major reduction in funding ($60,000 funded compared to $300,000 proposed).This cut occurred early in the project, and the funds actually allocated provided less than one year of funding for the proposed two-year project.This document is divided into two primary parts. We first describe ultrafast optical measurements and theoretical calculations performed at UI and then discuss the STM studies conducted at TAMU. Example data are shown in Figure 1 for sample 201-009 at a lattice temperature of 77K. ULTRAFAST OPTICAL SPECTROSCOPY AND THEORY ExperimentsThe various curves represent the PL response for varying excitation powers. All data were obtained using near-IR excitation (~ 800 nm) with ~100 fs pulses at a repetition rate of 76 MHz (roughly 13 ns between pulses). The decay of the PL is a measure of the decay of the carrier density through, in principle, all possible recombination mechanisms, e.g., Shockley-Read-Hall (SRH), i...

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Interface contributions to spin relaxation in a short-period InAs/GaSb superlattice

Cited by 42 publications

References 17 publications

Spin dynamics in semiconductors

Spin dynamics in semiconductors

Coherent Spin Transport and Suppression of Spin Relaxation in InSb Nanowires with Single Subband Occupancy at Room Temperature

Electronic, Optical and Structural Properties of 6.1 Angstrom III-V Semiconductor Heterostructures for High-Performance Mid-Infrared Lasers

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