A theory for longitudinal (T 1 ) and transverse (T 2 ) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations.
Quantitative agreement between our calculations and measurements is foundfor GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.
We have performed in vivo measurements of near-infrared rat skin absorption in the 4000-5000-cm(-1) spectral range (2.0-2.5-microm wavelength) during a glucose clamp experiment in order to identify the presence of glucose-specific spectral information. Spectra were collected during an initial 3-h period where the animal's blood glucose concentration was held at its normal value. The blood glucose level was then increased above 30 mM by venous infusion of glucose and held for 2 h, after which it was allowed to return to normal. Spectra were recorded continuously during the procedure and are analyzed to identify spectral changes associated with changes in glucose concentration. Because the change in absorbance due to an increase in glucose concentration is small compared to changes due to other variations (e.g., the thickness of the skin sample), a simple subtraction of absorbance spectra from the hyperglycemic and euglycemic phases is not instructive. Instead, a set of principal components is established from the euglycemic period where the glucose concentration is constant. We then examine the change in absorbance during the hyperglycemic period that is orthogonal to these principal components. We find that there are significant similarities between these orthogonal variations and the net analyte signal of glucose, which suggests that glucose spectral information is present. The analysis described here provides a procedure by which the analytical significance of a multivariate calibration can be evaluated.
Polarization-resolved, subpicosecond pump-probe measurements at a wavelength of 3.43 m are used to determine the electron spin relaxation time T 1 in bulk InAs at room temperature. The measured T 1 of 19Ϯ4 ps is in excellent agreement with the theoretical value of 21 ps, which is obtained from a nonperturbative calculation based on the D'yakonov-Perel' mechanism of precessional spin relaxation ͓M.
We present a comparison of theoretical calculations and experimental measurements of the Auger recombination rate in a narrow-gap semiconductor superlattice with a complex band structure. The calculations and measurements indicate that the rate depends on density as n 2 for low density, and changes to an n dependence when the electrons and holes become degenerate. The calculations are the first to incorporate superlattice umklapp processes, which contribute about half of the total rate and substantially improve the agreement with experiment.
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