Room-temperature electron spin relaxation in bulk InAs

Boggess, Thomas F.; Olesberg, J. T.; Yu, Chung Huang; Flatté, Michael E.; Lau, Wayne H.

doi:10.1063/1.1290143

Cited by 69 publications

(53 citation statements)

References 35 publications

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“…83 83 References for selected semiconductors include the following: p-GaAs (Fishman and Lampel, 1977;Seymour et al, 1981;Aronov et al, 1983;Marushchak et al, 1984;Zerrouati et al, 1988;Sanada et al, 2002); n-GaAs (see III.D.3); p-Al x Ga 1Ϫx As (Garbuzov et al, 1971;Clark et al, 1975); p-GaSb (Safarov and Titkov, 1980;Sakharov et al, 1981;Aronov et al, 1983); n-GaSb (Kauschke et al, 1987); n-InSb (Chazalviel, 1975); InAs (Boggess et al, 2000); p-InP (Gorelenok et al, 1986); n-InP (Kauschke et al, 1987); n-GaN (Fanciulli et al, 1993;Beschoten et al, 2001). …”

Section: Bulk Semiconductorsmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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Section: Bulk Semiconductorsmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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“…InAs has assumed increasing importance in recent years as a result of its potential applications in long-wavelength optoelectronic and high-speed electronic devices, as electron quantum well materials for both AlSb/InAs/AlSbbased electronic devices and spintronic devices [1][2][3][4][5]. With regard to experimental study, Ley L et al surveyed the total valence band via X-ray photoemission spectra of InAs [6].…”

Section: Introductionmentioning

confidence: 99%

First principles study of electronic and optical properties of InAs

Feng

Cui

et al. 2009

Open Physics

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Abstract:The electronic and optical properties of InAs in core-level spectra are calculated using the full-potential linearized augmented plane wave plus local orbitials (FP-LAPW+lo) method. The real and imaginary parts of the dielectric function ε(ω), the optical absorption coefficient I (ω), the reflectivity R(ω), the refractive index (ω), and the extinction coefficient (ω) are calculated. All these values are in good agreement with the experimental data. The effect of spin-orbit coupling on optical properties is also investigated and found to be quite small.

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“…1. At room temperature and zero magnetic field spin lifetimes of the order of 1 ns were reported for GaAs [22] (though of the order of hundreds of ns for low temperature), and 10 -20 ps for lightly n-type InSb and InAs [9][10][11][12], and have been interpreted with the DP mechanism. The expected difference in the DP lifetime between InSb and GaAs may be roughly estimated from band structure parameters at the band edge, since at the band edge where the spin splitting is cubic in k, m e = 3 ÿ p , where…”

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confidence: 99%

Spin Relaxation by Transient Monopolar and Bipolar Optical Orientation

et al. 2006

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We have used two-color time-resolved spectroscopy to measure the relaxation of electron spin polarizations in a bulk semiconductor. The circularly polarized pump beam induces a polarization either by direct excitation from the valence band, or by free-carrier (Drude) absorption when tuned to an energy below the band gap. We find that the spin relaxation time, measured with picosecond time resolution by resonant induced Faraday rotation in both cases, increases in the presence of photogenerated holes. In the case of the material chosen, n-InSb, the increase was from 14 to 38 ps. DOI: 10.1103/PhysRevLett.96.096603 PACS numbers: 72.25.Rb, 72.25.Fe, 78.47.+p Spin polarizations have become a focus of interest in semiconductor physics in recent years, not least for their potential application in ''spintronic'' devices [1]. It has been shown that spin polarized electrons (or holes) can be injected from magnetic semiconductor materials into semiconductors [2,3], that they can be coherently transported through a device [4], and that they can be controlled (or modulated) with an external electric field [5]. It remains challenging to improve these breakthroughs to the extent that they can be combined in a practical device [1]. A sufficiently long spin lifetime s is important in the design of structures which confine and/or transfer spin. It is therefore necessary to understand the establishment of a polarized spin population and subsequent spin relaxation mechanisms in both bulk and low dimensional semiconductors. A large amount of literature has been established to determine spin lifetimes by one or another form of timeresolved optical orientation techniques based on spin injection by pulsed interband pumping with circularly polarized light [4 -13]. In this Letter we investigate and contrast the spin relaxation lifetimes as measured in a bipolar (interband) experiment with spin lifetimes measured in a monopolar regime. In the former, significant numbers of excess electrons and holes are photopumped, whereas most device proposals involve electrical injection and manipulation of one type of charge carrier only, ideally at room temperature and often zero magnetic field. To this end we compare in such conditions the results of interband versus intraband pumping of spins with picosecond pulses, in the same sample. We find that the difference is a factor of between 2 to 3.Only one previous experiment measured the lifetime of spins pumped with monopolar excitation in zero magnetic field. In that case hole lifetimes in p-type GaAs=AlGaAs quantum wells were measured at low temperature by steady state bleaching of the circularly polarized photocurrent response [14]. The spin lifetime estimated from the saturation intensity was found to be 20 ps at liquid helium temperature. Our picosecond time-resolved measurements do not rely on theoretically derived absorption cross sections, were made on material at room temperature, and directly compare the bipolar and monopolar spin excitation and relaxation in the same sample. Our results...

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Room-temperature electron spin relaxation in bulk InAs

Cited by 69 publications

References 35 publications

Spintronics: Fundamentals and applications

Spintronics: Fundamentals and applications

First principles study of electronic and optical properties of InAs

Spin Relaxation by Transient Monopolar and Bipolar Optical Orientation

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