Interface effect on titanium distribution during Ti-doped sapphire crystals grown by the Kyropoulos method

Stelian, Carmen; Alombert-Goget, G.; Sen, Gourav; Barthalay, Nicolas; Lebbou, Kheirréddine; Duffar, T.

doi:10.1016/j.optmat.2017.04.020

Cited by 10 publications

(6 citation statements)

References 16 publications

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“…The crystallization takes place in the melt with a highly convex crystallization interface [31]. This interface shape coupled with the segregation effect induces is responsible to a strong gradient of Ti concentration in the crystal [32]. The interface shape is driving by the thermal gradient in the melt and the crystal due to the isolated configuration and the rotation speed imposed on the crystal.…”

Section: Discussionmentioning

confidence: 99%

Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique

et al. 2018

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Section: Discussionmentioning

confidence: 99%

Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique

et al. 2018

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“…Kyropoulos crystal growth sketch for Ti:sapphire. The inserted crystal picture has been obtained by extracting a crystal from the melt during growth …”

Section: P O2 During Ti:sapphire Growthmentioning

confidence: 99%

Thermodynamic Calculations of Ti Ion Concentrations and Segregation Coefficients during Ti:Sapphire Crystal Growth

Xuan

Pisch

Duffar

2022

Crystal Growth & Design

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The theoretical phase diagrams of the binary Al 2 O 3 −Ti 2 O 3 and Al 2 O 3 −TiO 2 , as systems calculated using FactSage software and its thermodynamic databases, are reoptimized. This has been performed on the basis of a literature survey on experimental precipitation limits of Ti 2 O 3 and TiO 2 in the Al 2 O 3 solid solution. The appropriate oxygen partial pressure (p O 2 ) range for controlling the valence state of Ti ions during Ti:sapphire crystal growth is obtained with respect to the calculated Ellingham type predominance diagram. Factors affecting the p O 2 such as furnace gas, crucible materials, and graphite heating elements are analyzed. The influence of p O 2 on Ti 3+ and Ti 4+ concentrations in the solid and liquid phases is derived from thermodynamic equilibrium calculations. The equilibrium segregation coefficients of Ti 3+ and Ti 4+ in sapphire are calculated to be 0.046 and 0.011, respectively. Taking into account the data extrapolated from experiments, a value of 0.06 ± 0.02 is proposed for the equilibrium segregation coefficient of total Ti under low p O 2 .

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“…The liquid phase is supposed to be homogeneous, as was shown during Kyropoulos growth process. 29 Hence, the solute concentrations in the liquid phase vary with time following the profile of Scheil-Gulliver law. Ti ion boundary concentrations in the solid phase at the solid-liquid interface at any time can be calculated from the concentrations in the liquid phase by:…”

Section: Boundary Conditions For the Crystal Growth Casementioning

confidence: 99%

On the way to modelling dopant valence in ionic crystal growth: the Ti:Al₂O₃ case

Xuan,

Duffar

2022

CrystEngComm

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Interface effect on titanium distribution during Ti-doped sapphire crystals grown by the Kyropoulos method

Cited by 10 publications

References 16 publications

Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique

Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique

Thermodynamic Calculations of Ti Ion Concentrations and Segregation Coefficients during Ti:Sapphire Crystal Growth

On the way to modelling dopant valence in ionic crystal growth: the Ti:Al₂O₃ case

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Interface effect on titanium distribution during Ti-doped sapphire crystals grown by the Kyropoulos method

Cited by 10 publications

References 16 publications

Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique

Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique

Thermodynamic Calculations of Ti Ion Concentrations and Segregation Coefficients during Ti:Sapphire Crystal Growth

On the way to modelling dopant valence in ionic crystal growth: the Ti:Al2O3 case

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On the way to modelling dopant valence in ionic crystal growth: the Ti:Al₂O₃ case