Interface effects for very thin Al films deposited onto Cu, Si and SiO<sub>2</sub> substrates

Leinen, D.

doi:10.1002/sia.1801

Cited by 2 publications

(2 citation statements)

References 22 publications

(12 reference statements)

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“…The Auger parameter (AP), α, which is defined as the sum of the binding energy of the Si2p peak and the kinetic energy of the corresponding Si KLL Auger peak, is another experimental parameter reflecting the effects of the particle size, and/or the matrix. In addition, the AP is known to be free from charging effects. ,− Our measured AP for the Si(nc) in the SiO 2 matrix is 1715.1 ± 0.1 eV, slightly lower than the value of the bulk Si (1715.9 eV). The difference (Δα = −0.8 eV) is within the expected magnitude and direction, since it is well established that the less electronically conducting matrix decreases the AP; for example, the corresponding value for Al on SiO 2 is −1.10 eV smaller than that on Si, which is a further −0.60 eV smaller than that on Cu, due to the matrix relaxation effects .…”

Section: Resultsmentioning

confidence: 60%

“…In addition, the AP is known to be free from charging effects. ,− Our measured AP for the Si(nc) in the SiO 2 matrix is 1715.1 ± 0.1 eV, slightly lower than the value of the bulk Si (1715.9 eV). The difference (Δα = −0.8 eV) is within the expected magnitude and direction, since it is well established that the less electronically conducting matrix decreases the AP; for example, the corresponding value for Al on SiO 2 is −1.10 eV smaller than that on Si, which is a further −0.60 eV smaller than that on Cu, due to the matrix relaxation effects . Since our experimental finding reveals the presence of silicon suboxides, there must be few layers of these suboxides in the immediate vicinity of the Si(nc); these are expected to provide a smaller relaxation shift than the full oxide, in agreement with our findings.…”

Section: Resultsmentioning

confidence: 60%

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X-ray Photoelectron Spectroscopic Analysis of Si Nanoclusters in SiO₂ Matrix

et al. 2005

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We investigated silicon nanoclusters Si(nc) in a SiO 2 matrix prepared by the plasma-enhanced chemical vapor deposition technique, using X-ray photoelectron spectroscopy (XPS) with external voltage stimuli in both static and pulsed modes. This method enables us to induce an additional charging shift of 0.8 eV between the Si2p peaks of the oxide and the underlying silicon, both in static and time-resolved modes, for a silicon sample containing a 6 nm oxide layer. In the case of the sample containing silicon nanoclusters, both Si2p peaks of Si(nc) and host SiO 2 undergo a charging shift that is 1 order of magnitude larger (>15 eV), with no measurable difference between them (i.e., no differential charging between the silicon nanoclusters and the oxide matrix could be detected). By use of a measured Auger parameter, we estimate the relaxation energy of the Si(nc) in the SiO 2 matrix as -0.4 eV, which yields a -0.6 eV shift in the binding energy of the Si(nc) with respect to that of bulk Si in the opposite direction of the expected quantum size effect. This must be related to the residual differential charging between the silicon nanoclusters and the oxide host. Therefore, differential charging is still the biggest obstacle for extracting size-dependent binding energy shifts with XPS when one uses the oxide peak as the reference.

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