Interface evaluation on the brazed system of AlN‐Ticusil‐Graphite

Abstract

The graphite-Ticusil-AlN system was joined under vacuum or flowing atmospheres, such as 5% H 2 -95% N 2 and argon atmosphere, to investigate the morphology and forming mechanism of the reaction phases at the interfaces of AlN-Ticusil-graphite layers. Scanning electron microscopy, energy-dispersive spectroscopy, electron probe microanalysis, and transmission electron microscopy were used to examine the composition and structure of the interface products. The AlN-Ticusil interface could be divided into two layers, the TiN layer and titanium-copper-rich compound layer. The thickness of the TiN layer was only affected by the joining temperature and could be regarded as mainly dependent on the reaction. The titanium-copper compound layer was composed of (Ti,Cu,Al) 6 N column when joined under vacuum and was composed of TiN particles when joined in a flowing atmosphere. The products on the graphite-Ticusil interface were also examined as TiC, which was strictly bonded with graphite and Ticusil filler. K E Y W O R D Sbrazing,

Effect of interfacial microstructure evolution on the peeling strength and fracture of AMB Cu‐metalized AlN substrate

“…23,[31][32][33][34][35][36][37][38] T in these cases to determine the resin flow ing times corresponding to different infilt Preceramic polycarbosilane polymers as precursors to make ceramic fibers 10,3 trix. [7][8][9]40,41 The chemical and volume ch pany ceramization of the polymer during documented in several studies. 10B) shows that the wave consists of two parts: the triangular copper bulge and the arch-shaped AlN ceramic.…”

“…23,[31][32][33][34][35][36][37][38] T in these cases to determine the resin flow ing times corresponding to different infilt Preceramic polycarbosilane polymers as precursors to make ceramic fibers 10,3 trix. [7][8][9]40,41 The chemical and volume ch pany ceramization of the polymer during documented in several studies. 28 Meanwhile, the AlN cell parameters are as follows: a = 0.311 nm, b = 0.311 nm, c = 0.4982 nm, α = 90°, β = 90°, and γ = 120° with the P6 3 mc space group.…”

“…Therefore, aluminum nitride (AlN) ceramic substrates with high thermal conductivity have drawn the interest from scientific communities 4–7 . Research focus has been directed toward bonding the AlN substrates sandwiched between copper foils 8 …”

“…[4][5][6][7] Research focus has been directed toward bonding the AlN substrates sandwiched between copper foils. 8 Two major technologies are widely used in the manufacture of copper-metalized ceramic substrates: DBC [9][10][11] and active metal brazing (AMB). 12,13 Compared with the Al 2 O 3 -Cu 2 O eutectic layer produced by DBC, the TiN reaction layer formed by AMB exhibits reduced interfacial thermal resistance and enhanced bonding strength.…”

“…Preceramic polycarbosilane polymers are commonly used as precursors to make ceramic fibers 10,39 and ceramic matrix. [7][8][9]40,41 The chemical and volume changes that accompany ceramization of the polymer during pyrolysis have been documented in several studies. For example, see Refs [39][40][41][42].…”