Interface‐Modulated Resistive Switching in Mo‐Irradiated ReS₂ for Neuromorphic Computing

Abstract

Coupling charge impurity scattering effects and charge‐carrier modulation by doping can offer intriguing opportunities for atomic‐level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here a facile approach is reported to transform an RS‐inactive rhenium disulfide (ReS2) into an effective switching material through interfacial modulation induced by molybdenum‐irradiation (Mo‐i) doping. Using ReS2 as a model system, this study unveils a unique RS mechanism based on the formation/dissolution of metallic β‐ReO2 filament across the defective ReS2 interface during the set/reset process. Through simple interfacial modulation, ReS2 of various thicknesses are switchable by modulating the Mo‐irradiation period. Besides, the Mo‐irradiated ReS2 (Mo‐ReS2) memristor further exhibits a bipolar non‐volatile switching ratio of nearly two orders of magnitude, programmable multilevel resistance states, and long‐term synaptic plasticity. Additionally, the fabricated device can achieve a high MNIST learning accuracy of 91% under a non‐identical pulse train. The study's findings demonstrate the potential for modulating RS in RS‐inactive 2D materials via the unique doping‐induced charged impurity scattering property.

An electrically and optically controllable memristor with synaptic plasticity based on scalable monolayer ReS2/WS2 heterostructure

“…This electrical property con rms a typical unipolar resistive switching behavior. Different from the previous reported ReS 2 memristor that only exhibited bipolar resistive switching behavior, 14,32,33 the ReS 2 /WS 2 unipolar memristor predicts higher switching ratio, higher integration density, and more simpli ed control circuit. Good reliability is demonstrated during the repeated 100 times switching cycles (the brown cycle curves in Fig.…”

Modulate the Interfacial Oxygen Vacancy for High Performance MoS2 Photosensing−Memory Device

“…In the absence of light, only gate-induced electrical stress can stimulate the part of the vacancy and make it move along the interface, resulting in the movement of the trapped electrons. [28,33,47] The transfer of the oxygen vacancy and the electrons between the electrodes make contributions to the I ds , while a great deal of electrons still remain dormant in the vacancy at the interface of BMN and MoS 2 . With the introduc-tion of the light pump, the trapped electrons absorb energy from the photons and are excited.…”

Direct Laser Irradiation and Modification of 2D Te for Development of Volatile Memristor

“…The bottom electrodes were firstly fabricated by electron-beam lithography (EBL) and the e-beam evaporation [ 6 , 8 ]. The p-doped Si substrate with 285 nm SiO 2 was spin-coated by poly(methyl methacrylate) (PMMA) A4 950 photoresist.…”

“…These demonstrate that 2D materials have potential for high-performance devices and solving the bottleneck problems of traditional silicon-based devices in the future. In particular, memristors based on 2D materials also have promising and gorgeous performances, including lager switching ratios (SR), low energy consumption, and excellent stability for in-memory and neuromorphic computing, which are promising solutions for next-generation computing systems [ 8 , 9 , 10 ]. Besides the exploration of advanced synthesis methods, post-fabrication of 2D materials are also critical ways to further tune and improve properties of materials and corresponding nano-devices.…”