Interface modulation and quantum well to quantum wire crossover in semiconductor heterostructures

Effects of hydrostatic pressure on the electron gparallel factor and g-factor anisotropy inGaAs-(Ga, Al)As quantum wells under magnetic fields N Porras-Montenegro, C A Duque, E Reyes-Gómez et al. Electron g-factor study in {\rm Ga}_{1-x}In_{x}{\rm As}_{y}{\rm Sb}_{1-y}\hbox{--}{\rm GaSb} and {\rm GaSb}\hbox{--}{\rm Ga}_{1-x}{\rm In}_{x}{\rm As}_{y}{\rm Sb}_{1-y}\hbox{--}{\rm GaSb} quaternary alloy semiconductor SQDSQDs (SQDs) R Sánchez-Cano and N Porras-Montenegro Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields F E López, E Reyes-Gómez, H S Brandi et al. Jumping magneto-electric states of electrons in semiconductor multiple quantum wells Pawel Pfeffer and Wlodek Zawadzki Magnetic field effect on electron spin dynamics in (110) GaAs quantum wells G Wang, A Balocchi, A V Poshakinskiy et al. AbstractThe electron effective g factor tensor in asymmetric III-V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the´k p 8 8 · Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors * g and *

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“…QWs, SLs). Other ETB calculations have been performed to study the crossover between QWs and T-shaped wires in a AlAs/GaAs system [284].…”

Section: Two-dimensional Nanostructures: Quantum Wiresmentioning

confidence: 99%

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Carlo

2002

Semicond. Sci. Technol.

116

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Lateral confinement of carriers in ultrathin semiconductor quantum wells

Shtinkov

Desjardins

Masut

2003

Microelectronics Journal

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Characterization of eigenstates interface-modulated in GaAs (631) multi-quantum well heterostructures

Perea-Parrales

Espinosa-Vega

Mercado-Ornelas

et al. 2020

Journal of Applied Physics

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By taking advantage of the GaAs (631) corrugation self-assembled on top of multi-quantum well heterostructure interfaces, the modulation of the confined state wave functions (eigenstates) has been achieved, attaining quasi-one-dimensional or fractional dimension eigenstates. Two different theoretical approaches were used to compute the energy shift of subband optical transitions as a function of the interface corrugation geometrical configuration. For large nominal quantum well widths and small corrugation amplitude, the perturbation theory was employed, while a modified Lanczos algorithm assisted us to calculate the shifts when the corrugation amplitude was comparable to the nominal quantum well width. Experimentally, the heterostructures were grown by molecular beam epitaxy on (001) and (631) oriented substrates, where the quasi-one-dimensional ordering was reached by changing the As to Ga molecular beam fluxes ratio. It was found that the corrugated interfaces (i) break the wave function's in-plane symmetry, allowing transitions that, in principle, must be forbidden and (ii) induce blue shifts or red shifts in the order of 10 meV to the energy spectrum of the quantum wires depending on the lateral and vertical periodicities, exhibiting the presence of a lateral confinement system. The main result is the effective modulation of eigenstates through the interface corrugation control. Additionally, it was found that the interface modulation effect is greater for harmonic (n > 1) heavy (and light) hole subbands than for the ground states.

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Interface modulation and quantum well to quantum wire crossover in semiconductor heterostructures

Cited by 4 publications

References 22 publications

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Lateral confinement of carriers in ultrathin semiconductor quantum wells

Characterization of eigenstates interface-modulated in GaAs (631) multi-quantum well heterostructures

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