Interface optical phonon modes and electron–phonon interactions in wurtzite GaN/ZnO quantum wells

Wei, Shuyi; Wang, Yan; Wei, Lingling

doi:10.1016/j.physb.2009.08.298

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2011

2015

Publication Types

Select...

Article6

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 6 publications

(1 citation statement)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…L€ u and Cao 10 have investigated confined optical phonon modes in wurtzite GaN/ZnO quantum wells. Wei et al 11 have investigated the interface optical phonon modes in wurtzite GaN/ZnO quantum wells. More recently, Zhou and Xie 12 have studied the electron-interface optical phonon interactions in rectangular wire and quantum dot.…”

Section: Introductionmentioning

confidence: 99%

Effect of ternary mixed crystals on interface optical phonons in wurtizte InxGa1−xN/GaN quantum wells

Huang

Chen

Ren

2012

Journal of Applied Physics

View full text Add to dashboard Cite

The effect of ternary mixed crystals on the interface optical phonons in wurtizte In x Ga 1Àx N/GaN quantum wells is studied based on the modified random-element isodisplacement model and dielectric continuum model. The results show that the interface optical phonons appear different frequency range with different indium concentration. The frequencies of interface optical phonons in the high frequency range decrease almost linearly with increasing indium concentration and do not vary almost linearly in the low frequency range. The indium concentration has more important effect on the electron-phonon interaction in low frequency range. V

show abstract

Section: Introductionmentioning

confidence: 99%