Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD

Halliop, Basia; Salaün, Marie-France; Favre, Wilfried; Varache, Renaud; Gueunier‐Farret, Marie‐Estelle; Kleider, Jean‐Paul; Kherani, Nazir P.

doi:10.1016/j.jnoncrysol.2012.01.048

Cited by 5 publications

(6 citation statements)

References 10 publications

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“…rent pulsed (DC-pulsed) plasma-enhanced chemical vapor deposition (PECVD) is one of the most promising methods for surface modification of tool steels used in various industries. [8][9][10] This technique enables the uniform coating of complex-shaped parts like forming tools or the die casting components because of the higher operating pressure as compared to PVD, and due to plasma activation of the gas phase, lowers the deposition temperature significantly as compared to conventional thermal CVD. Other studies also indicated that the DLC films problem in sustaining stable plasma conditions during the deposition of insulating films could be solved by using bipolar-pulsed plasma sources.…”

Section: Deposition Of Dlc/oxynitriding Films Onto Jis Skd11 Steel Bymentioning

confidence: 99%

Deposition of DLC/oxynitriding Films onto JIS SKD11 Steel by Bipolar-pulsed PECVD

Chang

Huang³

et al. 2015

ISIJ Int.

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Section: Deposition Of Dlc/oxynitriding Films Onto Jis Skd11 Steel Bymentioning

confidence: 99%

Deposition of DLC/oxynitriding Films onto JIS SKD11 Steel by Bipolar-pulsed PECVD

Chang

Huang³

et al. 2015

ISIJ Int.

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“…Measurements of the lateral conductance have been performed both on (n) a‐Si:H/(p) c‐Si structures, and on (p) a‐Si:H/(n) c‐Si structures, using the schematic principle given in Figure .…”

Section: Determination Of Band Diagrams At Silicon Heterojunctionsmentioning

confidence: 99%

Recent Progress in Understanding the Properties of the Amorphous Silicon/Crystalline Silicon Interface

Kleider

Alvarez

Brüggemann

et al. 2019

Physica Status Solidi (a)

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The authors review experimental and modeling approaches developed at GeePs to have a better knowledge and understanding of the interface between hydrogenated amorphous silicon (a‐Si:H) and crystalline silicon (c‐Si) in heterojunction solar cells. The authors emphasize the existence of a strong inversion layer at the c‐Si surface for both (n) a‐Si:H/(p) c‐Si and (p) a‐Si:H/(n) c‐Si heterojunctions. Conductive probe atomic force microscopy reveals the existence of a conductive channel at the c‐Si surface. The analysis of complementary lateral planar conductance and capacitance measurements allows for a better description of the band diagram in both types of heterojunctions especially through the determination of band offset values. Furthermore, the passivation properties of the (i) a‐Si:H buffer layer are studied by modeling the volume defects in a‐Si:H with the defect‐pool model. In particular, the DOS in the very thin (i) a‐Si:H layers is much larger than in bulk (i) a‐Si:H because the Fermi level position favors defect creation. Surface defects in c‐Si at the a‐Si:H/c‐Si interface are then quantified and the general trends of effective lifetime measurements with the (i) a‐Si:H layer thickness can be explained, notably the increase of the effective lifetime in c‐Si with increasing the (i) a‐Si:H buffer thickness.

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“…1, both the amplitude and the phase of the PCR signal were measured as a function of modulation frequency and then fitted to the foregoing theoretical model, Eq. (9). In view of the fact that several (7) unknown parameters had to be extracted from only two PCR signal channels (amplitude and phase), albeit over the entire frequency range (a substantial constraint), and in the absence of a rigorous mathematical proof of uniqueness of fit and measurement, in the multi-parameter fitting procedure we used two independent best-fitting computational programs to investigate the reliability and thus the uniqueness of the bestfitted results in a statistical analysis.…”

Section: Theorymentioning

confidence: 99%

“…Thin amorphous silicon films were deposited on silicon substrates using DC saddle field plasma enhanced chemical vapor deposition (DCSF-PECVD). 9 The thicknesses of i-a-Si and p-a-Si were all 30 nm and the thickness of the 1 Ω cm CZ n-c-Si substrate wafer was 290 µm for all samples in Table I.…”

Section: Instrumentation and Materialsmentioning

confidence: 99%

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Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

Zhang

Melnikov

Mandelis

et al. 2015

Review of Scientific Instruments

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A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

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Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD

Cited by 5 publications

References 10 publications

Deposition of DLC/oxynitriding Films onto JIS SKD11 Steel by Bipolar-pulsed PECVD

Deposition of DLC/oxynitriding Films onto JIS SKD11 Steel by Bipolar-pulsed PECVD

Recent Progress in Understanding the Properties of the Amorphous Silicon/Crystalline Silicon Interface

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

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