Interface properties of hydrogenated amorphous carbon films on SiO2 and SiO1.2: an in situ photoelectron study

Schelz, S.; Oelhafen, P.

doi:10.1016/0039-6028(92)90750-z

Cited by 27 publications

(5 citation statements)

References 26 publications

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“…The level of antibacterial activity (R) is industrially classified as grade 1, 2, or 3 for Antibacterial Textiles (Grade 1, R g 99.9%; grade Other coated substrate materials such as glass and steel were also found to exhibit Log Kill values greater than 4. In all cases, excellent adhesion (absence of delamination) of the functional layers was observed despite the quaternization step being carried out under reflux conditions at 70 °C for periods up to 8 h. For silicon and glass substrates, Si-C bonds will be responsible for adhesion (63); similarly, M-C bonds will be responsible for adhesion in metals (64), whereas for polymers, it is free radical sites created by the electrical discharge (65). These bioactive surfaces could be easily regenerated by rinsing in water (which dislodges the dead cell debris).…”

Section: Resultsmentioning

confidence: 99%

A Substrate-Independent Approach for Bactericidal Surfaces

Schofield

Badyal

2009

ACS Appl. Mater. Interfaces

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Existing methods for imparting antibacterial performance to solid surfaces tend to either be substrate-specific or rely upon leaching modes of action that cause ecological damage. An alternative approach is outlined comprising plasmachemical functionalization of solid surfaces with poly(4-vinyl pyridine) moieties and their subsequent activation (quaternization) with bromobutane to yield bactericidal activity. These bioactive surfaces can be applied to a host of different substrate materials and are easily regenerated by rinsing in water.

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Section: Resultsmentioning

confidence: 99%

A Substrate-Independent Approach for Bactericidal Surfaces

Schofield

Badyal

2009

ACS Appl. Mater. Interfaces

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“…This can be deduced from a slight broadening of the Si 2p peak on the high-binding-energy side of the main peak. 36 We can expect that the composition of the SiO x C y component is rather poorly defined and therefore no distinct peak with a welldefined chemical shift with respect to the main carbide peak can be distinguished unequivocally.…”

Section: Resultsmentioning

confidence: 99%

Photoelectron spectroscopic investigation of the bias-enhanced nucleation of polycrystalline diamond films

Reinke

Oelhafen

1997

Phys. Rev. B

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In the present work we describe an investigation of the nucleation mechanism of polycrystalline diamond films if the bias-enhanced-nucleation ͑BEN͒ method is used. Photoelectron spectroscopy with excitation energies in the ultraviolet ͓ultraviolet photoelectron spectroscopy ͑UPS͔͒ and x-ray regime ͑x-ray photoelectron spectroscopy͒ as well as electron energy loss spectroscopy are employed to monitor the nucleation process and the subsequent diamond film growth. The deposition is performed in situ, thus avoiding surface contamination with oxygen or hydrocarbons. The observation of the temporal evolution of composition and structure of the deposited film and its interface with the underlying silicon substrate allow us to develop a qualitative model, which describes the nucleation process. The BEN pretreatment leads, through the irradiation with low-energy ions, to the codeposition of an amorphous carbon phase and the crystalline diamond phase. The presence of both phases is readily apparent in the UPS analysis, which will prove to be an indispensible tool in the structural characterization of the carbon phase present at the surface. There is no indication for the presence of graphite or large graphitic clusters. A deconvolution of the C 1s and Si 2p core-level peaks does confirm the presence of two carbon phases and the formation of a silicon carbide interface. With increasing deposition time the contribution of diamond to the carbon film increases and upon switching to diamond growth conditions the amorphous carbon phase is rapidly etched and only the diamond crystals remain and continue to grow. This removal of the amorphous phase leads to a decrease in the overall carbon concentration at the surface by 18-30 % during the first 30 sec of the diamond growth period and was observed for a variety of pretreatment conditions. A silicon carbide interfacial layer is formed early on during the BEN pretreatment and its thickness is reduced considerably by etching during the diamond growth period. These results are summarized and discussed in the framework of a qualitative model for the nucleation process.

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“…The high resolution core level XPS spectra for S-Por-SiC drop-casted on gold foils are shown in Figure 5 plotted as counts per second versus binding energy. The high resolution XPS spectrum of Si 2p for S-Por-SiC in Figure 5(a) shows a peak at 100.64 eV indicating the existence of SiC bonds [55][56][57] in the porous structure. In addition, other chemical states for Si 2p in S-Por-SiC involve silicon oxycarbide (102.10 eV) 58 and SiO 2 (103.70 eV), 59 which indicate oxidation of Si as a result of the anodic etch process.…”

Section: B Chemical Compositionmentioning

confidence: 99%

Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching

Rashid

Horrocks

Healy

et al. 2016

Journal of Applied Physics

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Porous silicon carbide was fabricated from n-type 4H-SiC substrates via anodic electrochemical etching in HF/ethanol solution and suspended in ethanol after ultrasonication. We observed three photoluminescence bands: two at wavelengths of 303 nm and 345 nm were above the bulk bandgap and one at 455 nm was below the bulk bandgap. These blue-shifted and red-shifted emission processes reveal the interplay between quantum confinement, surface states, and band edge related optical transitions. We propose a model to explain the frequently observed deviation from the quantum confinement in the photoluminesence trends for SiC-derived nanoparticles suspended in solvents. The quantum confined properties of the SiC structures provide a route for optical tunability in the UV-blue spectrum for use in novel photonic and biomedical applications.

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Interface properties of hydrogenated amorphous carbon films on SiO2 and SiO1.2: an in situ photoelectron study

Cited by 27 publications

References 26 publications

A Substrate-Independent Approach for Bactericidal Surfaces

A Substrate-Independent Approach for Bactericidal Surfaces

Photoelectron spectroscopic investigation of the bias-enhanced nucleation of polycrystalline diamond films

Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching

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