Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

“…Some of the difference in the amount of In/Ga post ALD oxides between the InGaAs(1 0 0) and InAlAs(1 0 0) reflects the difference in preexisting oxide on the surface prior to ALD so it is difficult to make an precise comparison to the DFT-MD simulation which assume a clean starting surface. A recent study on HfO 2 ALD on InGaAs vs InAlAs also shows the enhanced intermixing for oxide on Al containing semiconductors [47]. However, the experimental data is consistent with the lack of intermixing and nearly bulk-like interfacial charge states for a-Al 2 O 3 /InGaAs(1 0 0) in contrast to a-Al 2 O 3 /InAlAs(1 0 0) for which intermixing is predicted.…”

Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

“…Epitaxially grown (Al)InGaAs layers lattice matched to InP are of major importance for a wide variety of applications, such as in the active layers for telecom wavelength optoelectronic devices [1], quantum cascade lasers [2] and they are currently being investigated as potential high-mobility channel layers in future CMOS technology generations [3,4]. Recent metalorganic vapor phase epitaxy (MOVPE) growth studies of (Al)GaAs on GaAs have shown that small misorientations in the range 0-0.61 on the GaAs substrate can have a dramatic impact in the optical and transport properties of the grown layers, allowing record material properties to be achieved for MOVPE, with results comparable with those obtainable by the best MBE systems [5,6].…”

Poisson-Schroedinger-Continuity two-dimensional analysis of both short (ballistic) and long (drift-diffusion) III–V FETs

“…Such expectations are based on the superior mobilities of these materials as summarized in detail in [1]. The research activity in these type of devices has been intense [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. Originally the focus was on inversion type devices [2][3] but very soon these type of III-V FETs were abandoned in favor of devices with intrinsic channels filled with electrons from a supply layer [4][5][6][7][8][9][10][11][12].…”

“…Originally the focus was on inversion type devices [2][3] but very soon these type of III-V FETs were abandoned in favor of devices with intrinsic channels filled with electrons from a supply layer [4][5][6][7][8][9][10][11][12]. Furthermore long-gate FETs [4] were quickly substituted with nanometric gate FETs [5][6][7][8][9][10][11][12][13][14][15][16][17] and indeed, at the moment, 30-60nm gate length QW FETs with InGaAs channels exist having superior performance such as a subthreshold slope of 96mV/dec and a peak transconductance of 2.4mS/μm [9][10].…”