Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

Abstract

a b s t r a c tWe investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1 0 0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 01, 0.21, 0.41 and 0.61; 0.41 was found to consistently result in the narrowest peaks, with the optimal spectral purity of $ 4.25 meV found from a 15 nm quantum well. The width of the emission from the 15 nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K) electron mobilities up to m$3.5 Â 10 4 cm 2 /V s with an electron concentration of $ 1 Â 10 16 .

Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

“…Although hillocks or step-bunching can be mitigated to some degree by changing the growth conditions such as growth rate and temperature [21,22], the most effective approach is to use the substrates with an optimized misorientation. Similar trends have been found in evaluating the optical quality of InGaAs/InAlAs QWs and morphology of InP and InAlAs on InP substrates [23,24]. Different device performance characteristics have also been reported for QCLs grown on GaAs substrates with different misorientations [25].…”

On the activation of implanted silicon ions inp-In0.53Ga0.47As

“…The V/III ratio during the In 0.53 Ga 0.47 As layer growth was 140. Low-temperature photoluminescence (10 K) linewidths below 1 meV (unpublished data) were systematically obtained on InGaAs quantum wells in GaAs barriers, confirming state-of-the-art MOVPE quality [8]. The InP buffer layer and the In 0.53 Ga 0.47 As layer were both Zn doped (5 × 10 16 cm −3 ).…”

Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE

“…All epitaxial samples discussed here were grown in a high purity MOVPE − commercial horizontal reactor (AIX 200) at low pressure (80 mbar) with purified N 2 as carrier gas. The precursors were trimethylindium (TMIn), trimethylgallium (TMGa), arsine (AsH 3 ) and phosphine (PH 3 ).…”