Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As

Shi, Ming; Tang, Hengjing; Shao, Xin; Huang, Xing; Cao, Gaoqi; Wang, Rui; Li, Tao; Xue, L.; Gong, Haimei

doi:10.1016/j.infrared.2015.04.011

Cited by 7 publications

(3 citation statements)

References 17 publications

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“…The design and fabrication of nanoporous materials are hot topics at the forefront of current materials science. With the availability of advanced nanoscopic design techniques including ion etching [1], chemical vapor deposition [2], and atomic manipulation via scanning tunneling electron microscopy [3], tailoring nanostructures to a specific design is not only possible, but the fabrication processes to achieve these nanostructures continue to increase in precision and viability. Nanopores bestow incredible characteristics upon materials such as high surface-tovolume ratios, increased catalytic power [4], high yield strength [5], and strain reversibility [6].…”

Section: Introductionmentioning

confidence: 99%

Effects of pore design on mechanical properties of nanoporous silicon

et al. 2017

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Nanoporous silicon has been emerging as a powerful building block for next-generation sensors, catalysts, transistors, and tissue scaffolds. The capability to design novel devices with desired mechanical properties is paramount to their reliability and serviceability. In order to bring further resolution to the highly variable mechanical characteristics of nanoporous silicon, here we perform molecular dynamics simulations to study the effects of ligament thickness, relative density, and pore geometry/orientation on the mechanical properties of nanoporous silicon, thereby determining its Young's modulus, ultimate strength, and toughness as well as the scaling laws versus the features of interior ligaments. Results show that pore shape and pattern dictate stress accumulation inside the designed structure, leading to the corresponding failure signature, such as stretching-dominated, bending-dominated, or stochastic failure signatures, in nanoporous silicon. The nanostructure of the material is also seen to drive or mute size effects such as "smaller is stronger" and "smaller is ductile". This investigation provides useful insight into the behavior of nanoporous silicon and how one might leverage its promising applications.

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Section: Introductionmentioning

confidence: 99%

Effects of pore design on mechanical properties of nanoporous silicon

et al. 2017

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“…Extra H atoms incorporated in the hydrogen-rich silicon nitride layer are Si 3 N 4 network breakers, which also reduce the density of the layer. Both a larger amount of H and lower layer density are tending to increase the etching rate in the HF solution [13,16] . The BOE etching rate gradually increases from 0 for sample 1 to 35 nm/min for sample 3 as the NH 3 flow rate rises from 3 to 9.5 sccm, whereas it significantly increases from 35 to 230 nm/min as the NH 3 flow rate is further increased to 12 sccm for sample 4.…”

Section: Resultsmentioning

confidence: 99%

“…Chou et al [12] have developed the SiN x passivation technique at a lower-temperature using high-density ICP-CVD, which utilizes inductively coupled plasma to create high-density plasma (around 10 12 cm -3 ) in the processing reactor. High density plasma allows the deposition of high quality SiN x at lower temperatures below 150 ℃ [13] . Furthermore, the separation between deposition area and plasma generation area can reduce the surface damage deriving from energetic ion bombardment.…”

Section: Introductionmentioning

confidence: 99%

Surface and optical properties of silicon nitride deposited by inductively coupled plasma-chemical vapor deposition

Zhu

Chen

et al. 2018

J. Semicond.

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The surface and optical properties of silicon nitride samples with different compositions were investigated. The samples were deposited on InP by inductively coupled plasma chemical vapor deposition using different NH3 flow rates. Atomic force microscopy measurements show that the surface roughness is increased for the samples with both low and high NH3 flow rates. By optimization, when the NH3 flow rate is 6 sccm, a smooth surface with RMS roughness of 0.74 nm over a 5 × 5 μm2 area has been achieved. X-ray photoelectron spectroscopy measurements reveal the Si/N ratio of the samples as a function of NH3 flow rate. It is found that amorphous silicon is dominant in the samples with low NH3 flow rates, which is also proved in Raman measurements. The bonding energies of the Si and N atoms have been extracted and analyzed. Results show that the bonding states of Si atoms transfer from Si0 to Si+4 as the NH3 flow rate increases.

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Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer

Wan

Shao

et al. 2020

Infrared Physics & Technology

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Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As

Cited by 7 publications

References 17 publications

Effects of pore design on mechanical properties of nanoporous silicon

Effects of pore design on mechanical properties of nanoporous silicon

Surface and optical properties of silicon nitride deposited by inductively coupled plasma-chemical vapor deposition

Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer

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