Interface quality of SOI MOSFET's reflected in noise and mobility

Chen, J.; Lee, A.; Peng, Fang Zheng; Solomon, R.; Chan, T.Y.; Ko, P.K.; Hu, Chenming

doi:10.1109/soi.1991.162876

Cited by 5 publications

(1 citation statement)

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“…Threshold voltage matching should be similar to bulk silicon given the reasonable threshold voltage control of the device [ 111. However, the device floating body effect causes concerns in Idsat matching, output resistance linearity and l/f noise overshoot at the drain current "kink" region [25]. The low drain breakdown voltage also limits the circuit supply voltage to less than 2.5V using conventional device layouts.…”

Section: B ) Analog -Basebandmentioning

confidence: 99%

TFSOI technology for portable wireless communication systems

Huang

Tseng²,

Monk³

et al.

Proceedings of CICC 97 - Custom Integrated Circuits Conference

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Recent growth in the portable wireless communication market has driven semiconductor technologies toward voltage and power reduction. The reduced junction capacitance and near-ideal MOS device characteristics of SO1 provides an inherent advantage for low-voltage low-power applications. Substantial progress in applying SO1 technology for these applications has been demonstrated in recent years. The quest for a single chip system has also initiated work in developing high frequency and analog SO1 circuits. In this paper, the application of Thin-Film-Silicon-On-Insulator (TFSOI) technology for wireless communication systems will be reviewed and future development will be discussed.

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Section: B ) Analog -Basebandmentioning

confidence: 99%