Interface stability in CoFe and CoFeB based multilayers

Pym, A. T. G.; Lamperti, Alessio; Cardoso, S.; Tanner, B. K.

doi:10.1016/j.spmi.2006.08.005

Cited by 5 publications

(2 citation statements)

References 19 publications

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“…The crystallization of CoFeB results in non-uniformly distributed spikes on the sample surface, which is responsible for the large standard deviation of the measured Rq. The crystallization [61,62] and interdiffusion [63] also result in a gradual increase in Rq with Tan. The changes in phases and structures in CoFeB/IrMn bilayers after annealing altered the magnetic properties of the continuous films, antidot and nanodot samples, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

Leung

Chiu

et al. 2017

Physics Letters A

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Section: Resultsmentioning

confidence: 99%

Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

Leung

Chiu

et al. 2017

Physics Letters A

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“…The stability of the interface structure of sputtered Ru/Co 80 Fe 20 layers during high temperature annealing has been studied recently [2] using grazing incidence X-ray scattering and interfaces have been shown to be stable up to at least 400…”

Section: Introductionmentioning

confidence: 99%

Layer and Interface Structure of CoFe/Ru Multilayers

et al. 2007

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Grazing incidence X-ray scattering measurements have been performed to probe the structure of CoFe/Ru layers and their interfaces. It was found that the interface width increased approximately linearly with the layer number from the substrate in a multilayer and that a substantial asymmetry existed between the width of CoFe/Ru and Ru/CoFe interfaces. By co--minimizing both the specular and diffuse scatter with that simulated from a model structure, the topological roughness amplitude was determined to be comparable to the intermixing interface width.

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Interface stability of magnetic tunnel barriers and electrodes

Lamperti

Pym

Eastwood

et al. 2007

Physica Status Solidi (a)

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Grazing incidence X‐ray scattering during in‐situ annealing has been used to study the interface stability in MgO‐based electrodes and barriers in magnetic tunnel junctions (MTJs). In MTJs based on Co60Fe20B20/MgO, low temperature annealing at about 200 °C can result in a drop in the tunnelling magnetoresistance (TMR). Specular reflectivity measurements show a change in fringe structure at high scattering vector, at the temperature at which the TMR drops. Also, a change in diffuse scatter relative to the specular scatter is observed. Annealing of [Co60Fe60B20/MgO]×14 multilayers prepared by three different techniques shows no change in the specular Bragg peaks with no loss of Kiessig fringe structure on crystallization and no change in the diffuse scatter up to 200 °C. We suggest that diffusion of Mn from the IrMn pinning layer, present in the MTJs but not in the multilayers, may be responsible for the differences in TMR behaviour. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Interface stability in CoFe and CoFeB based multilayers

Cited by 5 publications

References 19 publications

Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

Layer and Interface Structure of CoFe/Ru Multilayers

Interface stability of magnetic tunnel barriers and electrodes

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