Interface trap effect on gate induced drain leakage current in submicron N-MOSFET's

Abstract

An interface trap assisted tunneling mechanism which includes hole tunneling from interface traps to the valence band and electron tunneling from interface traps to the conduction band is presented to model the drain leakage current in a 0.5 p m LATID N-MOSFET. In experiment, the interface traps were generated by hot carrier stress. The increased drain leakage current due to the band-trap-band tunneling can be adequately described by an analytical expression of AId = ilexp(-B,t/F) with a value of B,t of 13 MV/cm, which is much lower than that (36 MVkm) of direct band-to-band tunneling.

Characterization of traps related to InAs quantum-dot growth-induced defects in GaAs by low-frequency noise measurements in reverse-biased Schottky diodes

“…1͑a͒. 13 For reversebias voltages above 5 V, the plot of ln(I r ) versus 1/V r 1/2 is also a straight line with a larger slope, indicating enhancement of the trap-assisted tunneling by the deep traps generated in the buffer GaAs layer due to QD formation. Such anomalous behavior in the leakage current has already been observed in reverse-biased p -n junctions, explained by the presence of deep traps located at some distance from the metallurgical junction.…”

Improvement of Ultrathin Oxides by Post-Oxidation Annealing

“…That is to say that the leakage current for 3nm-thick oxides is closely related to the interface trap density. As shown in the previous reports [5,6,7], it seems that the existence of the interface traps introduces "a trapassisted leakage mechanism" and leads to a significant increase in the leakage current at a low applied voltage. This leakage mechanism is conceptually shown in Figure 3.…”

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

“…GIDL current is one of the major drain leakage components and is generated in the overlapped region of the gate and the drain. The band-to-band tunneling (BBT) [10][11][12] and trapassisted tunneling [13][14][15] are the well-known mechanisms. At a somewhat high drain voltage, band-to-band tunneling occurs and at a low drain voltage, trap-assisted tunneling occurs through the interface state caused by stress such as DAHC.…”