Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation

Liu, Mengying; Shi, Chao Chao; Li, Weijie; Nan, Pengfei; Fang, Xuan; Ge, Binghui; Xu, Zhi; Wang, Dengkui; Fang, Dan; Wang, Xiaohua; Li, Jiaming; Zeng, Liuqin; Li, Jinhua

doi:10.1002/pssr.202200412

Cited by 4 publications

(2 citation statements)

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“…To further improve the NW device performance and promote the application of the NW-based synaptic devices for neuromorphic computing, future researches should focus on exploring new NW materials and designing new NWstructures. For example, floating gate transistors show outstanding advantages in data retention [67], superlattice structures are beneficial for carrier regulation and power consumption [23,68,69].…”

Section: Nanowire-based Synaptic Transistormentioning

confidence: 99%

Nanowire-based synaptic devices for neuromorphic computing

Chen

Zhao

et al. 2023

Mater. Futures

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The traditional von Neumann structure computers cannot meet the demand of high-speed big data processing, therefore, neuromorphic computing has got a lot of interest in recent years. Brain-inspired neuromorphic computing has the advantages of low power consumption, high-speed and high-accuracy. In human brains, the data transmission and processing are realized through synapses. Artificial synaptic devices can be adopted to mimic the biological synaptic functionalities. Nanowire is an important building block for nanoelectronics and optoelectronics, and many efforts have been made to promote the application of nanowires based synaptic devices for neuromorphic computing. Here, we will introduce the current progress of nanowires based synaptic memristors and synaptic transistors. The applications of nanowires based synaptic devices for neuromorphic computing will be discussed. The challenges faced by nanowires based synaptic devices will be proposed. We hope this perspective will be beneficial for the application of nanowires based synaptic devices in neuromorphic systems.

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Section: Nanowire-based Synaptic Transistormentioning

confidence: 99%

Nanowire-based synaptic devices for neuromorphic computing

Chen

Zhao

et al. 2023

Mater. Futures

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“…Temperature is another typical thermodynamic parameter, and may lead to a fundamental physical properties response such as lattice thermal expansion and the extent of the electron-phonon interaction [32][33][34][35]. Heating effects can be induced by special light irradiation on the semiconductor nanomaterials and cause a temperature gradient which can also affect their optical performance [36].…”

Section: Introductionmentioning

confidence: 99%

Excitation-wavelength-dependent photoluminescence in GaAs nanowires under high-pressure

Yin,

Liang,

et al. 2024

Nanotechnology

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GaAs nanowires (NWs) have wide application potential as near-infrared optical devices and the high-pressure strategy has been applied to modulatetheir crystal and electronic structures. As another typical thermodynamic parameter, temperature can also affect the optical performance of semiconductors. Here we report the excitation-wavelength-dependent photoluminescence in GaAs nanowires under high-pressure conditions. The pressure for achieving the maximum photoluminescence (PL) intensity and bandgap transition from direct to indirect of GaAs NWs varies (1.7-2.5 GPa) with the wavelength of the incident lasers (473-633 nm). The Raman peak of GaAs NWs shifts towards higher frequency with increasing excitation wavelengths at the same high-pressure conditions, revealing the stronger heating effect induced by incident laser with the shorter wavelength. The relative temperature difference in GaAs NWs induced by two different lasers can be estimated up to 537.5 K, and the strong heating effect suppresses the light-emission efficiency in GaAs NWs. With increasing the pressure, the relative temperature difference presents a gradual declining trend and PL intensity presents an opposite trend, which relates to the pressure-induced suppression of nonradiative recombination in GaAs NWs. Our study -provides insights into the mechanisms for the excitation-wavelength dependent photoluminescence (EWDP) effect and an alternative route to modulate the high-pressure performance of nanodevices.

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