Interfacial charge behavior modulation in 2D/3D perovskite heterostructure for potential high-performance solar cells

Electronic and optical absorption properties of organic–inorganic perovskites as influenced by different long-chain diamine molecules: first-principles calculations

“…For example, the band gaps of BA 2 PbI 4 and MAPbI 3 calculated by Biao Liu et al using HSE + SOC functional calculation are about 0.1 eV lower than PBE. 31 SOC-GW delivers calculated band gaps 1.67 eV for MAPbI 3 in excellent agreement with the experimental values. 32 But SOC has a very small effect on the atomic structure and ground-state properties.…”

High‐Performance Flexible Perovskite Solar Cells via Precise Control of Electron Transport Layer

“…In recent years, organic‐inorganic hybrid perovskites have drawn tremendous attention in photovoltaic field due to their unique properties . The power conversion efficiency (PCE) of perovskite solar cells (PSCs) has rocketed from 3.8% to a certified 25.2% .…”

Vertical 0D‐Perovskite/2D‐MoS2 van der Waals Heterojunction Phototransistor for Emulating Photoelectric‐Synergistically Classical Pavlovian Conditioning and Neural Coding Dynamics

“…[ 65 ] The plane‐averaged charge density difference can be defined as follows where ρ tot denotes the plane‐averaged charge density of the total CsPbBr 3 ‐QDs/2D‐MoS 2 heterojunction and ρ CPB and ρ MS denote the plane‐averaged charge densities of CsPbBr 3 ‐QDs and MoS 2 , respectively. [ 66 ] Indeed, electron accumulation and depletion are both mainly concentrated near the interface region. Moreover, the electron concentration of Δρ > 0 is near the CsPbBr 3 ‐QDs surface, whereas Δρ < 0 is near the MoS 2 surface in the charge region, which strongly indicates that the electrons primarily aggregate in the CsPbBr 3 ‐QDs interface and that holes mainly accumulate in the MoS 2 interface.…”

“…Moreover, the electron concentration of Δρ > 0 is near the CsPbBr 3 ‐QDs surface, whereas Δρ < 0 is near the MoS 2 surface in the charge region, which strongly indicates that the electrons primarily aggregate in the CsPbBr 3 ‐QDs interface and that holes mainly accumulate in the MoS 2 interface. [ 63,66 ] This result is consistent with the above discussion concerning Figure 5a, and it can directly account for the weak electrical synaptic plasticity. When an electrical pulse is applied to the coplanar gate, the positive mobile ions in the polymer gel electrolyte move laterally toward the MoS 2 channel interface, which induces a large number of free electrons in the MoS 2 channel and a significant EPSC.…”

“…Hence, a built‐in electric field from the MoS 2 to the CsPbBr 3 ‐QDs is established in the heterojunction interface, which easily drives the electrons from the 0D‐CsPbBr 3 side to the 2D‐MoS 2 side. [ 65,66 ] When light irradiation is applied, large numbers of electron–hole pairs are mainly photogenerated in the CsPbBr 3 ‐QDs thin film due to its excellent optical absorption properties, [ 40 ] as shown in Figure 5d. Accordingly, the electron–hole pairs are separated under the built‐in electric field.…”