Interfacial defect states in HfO/sub 2/ and ZrO/sub 2/ nMOS capacitors

Mudanai, S.; Li, F.; Samavedam, S.; Tobin, Philip J.; Kang, Chang Seok; Nieh, R.; Lee, J.C.; Register, Leonard F.; Banerjee, Sanjay K.

doi:10.1109/led.2002.805753

Cited by 43 publications

(19 citation statements)

References 4 publications

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“…The frequency dependence of the capacitance and conductance response are indicative of interface defects located as specific levels in the energy gap (13). Similar observations have been reported for a wide range of high-k MIS structures, including: ZrO 2 , HfO 2 , La 2 O 3 , Lu 2 O 3 , Dy 2 O 3 and other high-k MOS structures (7,(15)(16)(17)(18)(19). This type of CV/GV behaviour is generally observed in high-k MIS capacitors which exhibit no high temperature post deposition annealing (T>600 o C) and no forming gas annealing after gate oxide formation.…”

Section: Methodssupporting

confidence: 86%

Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN System: Origin, Instabilities and Passivation

2006

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An analysis of the origin and passivation of interface states in (100)Si/SiO x /HfO 2 /TiN capacitor structures is presented. For highk gate/metal gate capacitors which exhibit relatively high interface state densities (> 1x10 11 cm -2 ) the dominant interfacial defects are silicon dangling bond (P bo ) centres. For (100)Si/SiO x /HfO 2 /TiN capacitors which experience no high temperature thermal budget following HfO 2 /TiN gate formation (T<600 o C), the devices exhibit instabilities, where the interface state densities are modified during electrical measurements. The origin of this instability is studied. The response of the interface state density to rapid thermal annealing (30s) in N 2 over the temperature range 600-900 o C is presented. In addition, results are presented for interface state passivation in forming gas (0.5H 2 /0.95N 2 ) from 350-550 o C for (100)Si/SiO x /HfO 2 /TiN gate stacks with no post deposition annealing following TiN gate formation and for devices following a 900 o C, 30s N 2 RTA.

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Section: Methodssupporting

confidence: 86%

Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN System: Origin, Instabilities and Passivation

2006

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“…3,12,13 Nevertheless, the ZrO 2 /Si interfaces are often regarded as nonideal owing to the existence of interface defects, which is arisen from surface-structural defects, oxidation-induced defects, or radiationinduced defects. [14][15][16] The interface trap has a significant impact on the reliability and lifetime of a MOS device, as it is a major contributor to leakage current besides the characteristics of the oxide itself. 16,17 Therefore, various deposition techniques have been used to control the thickness and composition of interfacial layer (IL) in between the oxide and semiconductor.…”

Section: Aggressive Miniaturization Ofmentioning

confidence: 99%

Electrical Characteristics of Oxidized∕Nitrided Zr Thin Film on Si

Wong

Cheong

2011

J. Electrochem. Soc.

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In this work, electrical properties of simultaneously oxidized and nitrided sputtered Zr thin film on n-type Si via N 2 O gas were systematically investigated and charge conduction mechanisms through the oxide were quantitatively analyzed. Effects of simultaneous oxidation and nitridation duration on the metal-oxide-semiconductor characteristics were reported. It was revealed that 15-min oxidized/nitrided sample showed the highest effective dielectric constant, breakdown field, and reliability. This was attributed to the thinnest interfacial layer, lowest total interface trap, effective oxide charge, and highest barrier height between conduction band edge of the oxide and semiconductor. Depending on the applied electric field and oxidation/nitridation duration, charges were conducted through the oxide via space-charge-limited conduction, Schottky emission, Poole-Frenkel emission, and Fowler-Nordheim tunneling mechanisms.

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“…The hump in the CV-curve of ZrO 2 on p-Si suggests the existence of interface trap charges, which are located within the Si-bandgap. 16 With increasing ZrO 2 thickness the capacitance decreases, as illustrated in Fig. 4(b).…”

Section: Resultsmentioning

confidence: 85%

Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices

Freese

Grube

Wachowiak

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Molecular beam deposited zirconium dioxide (ZrO2) was assessed as high-κ gate dielectric for future GaN based devices. To compare and study electrical and structural properties, thin ZrO2 films were deposited on three different substrates, n++-c-plane GaN, p-(100) Si, and TiN. The films were fabricated by electron beam evaporation from a single stoichiometric ZrO2 target. A substrate-independent phase transition from amorphous ZrO2 to the tetragonal/cubic phase was identified by gracing incidence x-ray diffractometry. Finally, monoclinic ZrO2 emerged with increasing film thickness. As found by x-ray photoelectron spectroscopy, ZrO2 formed an abrupt interface to both GaN and TiN without intermixture. Dielectric constants in the range of 14–25 were extracted from capacitance versus voltage measurements for as-deposited ZrO2 films. The leakage currents of ZrO2 on GaN resembled their counterparts on Si as well as on TiN.

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Interfacial defect states in HfO/sub 2/ and ZrO/sub 2/ nMOS capacitors

Cited by 43 publications

References 4 publications

Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN System: Origin, Instabilities and Passivation

Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN System: Origin, Instabilities and Passivation

Electrical Characteristics of Oxidized∕Nitrided Zr Thin Film on Si

Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices

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