2022
DOI: 10.1007/s40145-022-0652-9
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Interfacial energy barrier tuning of hierarchical Bi2O3/WO3 heterojunctions for advanced triethylamine sensor

Abstract: Traditional triethylamine (TEA) sensors suffer from the drawback of serious cross-sensitivity due to the low charge-transfer ability of gas-sensing materials. Herein, an advanced anti-interference TEA sensor is designed by utilizing interfacial energy barriers of hierarchical Bi2O3/WO3 composite. Benefiting from abundant slit-like pores, desirable defect features, and amplification effect of heterojunctions, the sensor based on Bi2O3/WO3 composite with 40% Bi2O3 (0.4-Bi2O3/WO3) demonstrates remarkable performa… Show more

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Cited by 36 publications
(15 citation statements)
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“…The ZnO nanoparticle was a typical N-type semiconductor, while the Bi 2 O 3 nanoparticle was an important P-type semiconductor. [42,43] The ZnO-Bi 2 O 3 nanoparticle with P-N heterogeneous structure was obtained by chemical precipitation and calcination process, which dramatically improved the conductivity of the solution. However, there were numerous string beads and granular microspheres in the nanofiber.…”
Section: Surface Morphology Of the Nanofibrous Membranementioning
confidence: 99%
“…The ZnO nanoparticle was a typical N-type semiconductor, while the Bi 2 O 3 nanoparticle was an important P-type semiconductor. [42,43] The ZnO-Bi 2 O 3 nanoparticle with P-N heterogeneous structure was obtained by chemical precipitation and calcination process, which dramatically improved the conductivity of the solution. However, there were numerous string beads and granular microspheres in the nanofiber.…”
Section: Surface Morphology Of the Nanofibrous Membranementioning
confidence: 99%
“…It has been recognized that the architecture of heterojunction composite and rGO modification are effective factors for improving the sensing performance of metal-oxide-based sensors. 26 In the past few decades, almost all possible wideband-gap binary metal-oxide semiconductors have been investigated as gas-sensing materials. As a result, a ternary metal-oxide semiconductor of ZnWO 4 was introduced as potential gas-sensing material to structure the p−n heterojunction with WO 3 and increase the likelihood of finding a desirable gas sensor due to its high chemical stability, nontoxicity, low cost, and compatibility with WO 3 .…”
Section: Introductionmentioning
confidence: 99%
“…It has been recognized that the architecture of heterojunction composite and rGO modification are effective factors for improving the sensing performance of metal-oxide-based sensors . In the past few decades, almost all possible wide-band-gap binary metal-oxide semiconductors have been investigated as gas-sensing materials.…”
Section: Introductionmentioning
confidence: 99%
“…WO 3 is widely used in solar cells, , photocatalysts, , supercapacitors, , and other applications due to its suitable band gap, good visible light response, strong oxidation resistance, and structural stability. Unfortunately, the application of WO 3 in photochemistry is limited by low carrier mobility and high electron–hole pair recombination rate .…”
Section: Introductionmentioning
confidence: 99%