Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In0.53Ga0.47As

Abstract

In 0.53 Ga 0.47 As/InP/In 0.53 Ga 0.47 As heterostructures with InP barrier widths between 2 and 20 nm, grown by metal–organic chemical-vapor deposition (MOCVD), were analyzed with respect to interfacial intermixing and As incorporation in the InP. Raman scattering in conjunction with spectroscopic ellipsometry revealed the formation of intermixed (InGa)(AsP) interface layers with a width of about 2 nm. A second effect to be distinguished from interfacial intermixing was detected by the same experimental techniques, namely, the incorporation of As into the InP at an almost constant concentration for InP layer thicknesses up to at least 20 nm. The cross incorporation of As into the InP was attributed to memory effects in the MOCVD growth system.

Atomic layer diffusion and electronic structure at In0.53Ga0.47As/InP interfaces

“…It is difficult to achieve abrupt interfaces in these structures because both group-III and group-V elements must be switched at the interface. 5 Others, citing Raman data, 6,7 have reported evidence of P incorporation into the InGaAs lattice at growth or anneal temperatures above 640°C. Along with minimizing chamber memory effects, this allows the new group-V element time to diffuse into the existing epilayer, possibly resulting in interfacial broadening.…”

Atomic diffusion and band lineups at In0.53Ga0.47As-on-InP heterointerfaces

“…[6][7][8][9][10] This has been reported in the InAs 1−x P x /In 0.53 Ga 0.47 As 1−y P y system where experimentally measured changes in band lineup are attributed to compositional changes and strain development at the heterointerface. Several authors have reported compressively strained InAsP layers or islands at the InGaAs-on-InP interface.…”

Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy

“…Similar to the As carry-over effect in MOCVD-grown InP/InGaAs heterostructures, 22,23) the unintentional Ga incorporation is likely due to the sublimation from GaN deposits on the reactor chamber walls and the susceptor which formed during GaN growth pior to InAlN growth. Once the TMGa injection was stopped and the temperature ramped down to the growth temperature of the InAlN layer, Ga species desorbed from the GaN-covered areas and incorporated into the nominally Ga-free layers such as AlN and InAN.…”