Interfacial layers in Ta2O5 based stacks and constituent depth profiles by spectroscopic ellipsometry

Karmakov, Y.; Paskaleva, A.; Atanassova, E.

doi:10.1016/j.apsusc.2012.01.017

Cited by 6 publications

(4 citation statements)

References 25 publications

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“…It was clearly determined using high-resolution transmission electron microscopy thatstructures of the type studied here include an interfacial layer SiO x N y with a thickness in the order of 1 nm [20]. Similar results have been obtained using the model to calculate the depth profiles from the results of spectroscopic ellipsometry [21]. Therefore, the analysis of the I-V characteristics of the studied samples is to be based on the stacked layered structure model.…”

Section: Analysis Of I-v Characteristicssupporting

confidence: 72%

Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta₂O₅/SiO_xN_y dielectric stack

Novkovski¹

2020

J. Phys. D: Appl. Phys.

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In this work we carry out a refined analysis of the C–V and I–V characteristics of Al/Ta2O5/SiOxNy/Si structures at limited voltages (from −3.0 V to +1.0 V). The modified Terman method was used to determine the interface state densities over the silicon bandgap, and an extended comprehensive model was utilised to determine the I–V characteristics of metal/high-κ/SiO2/Si structures. A sharp peak in interface states distribution is observed at around 0.1 eV above the valence band top; its presence is identified as the origin of the double-knee shaped C–V characteristics. The substantial contribution of the Schottky effect was observed in the leakage currents at low voltages.

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Section: Analysis Of I-v Characteristicssupporting

confidence: 72%

Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta₂O₅/SiO_xN_y dielectric stack

Novkovski¹

2020

J. Phys. D: Appl. Phys.

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“…For example, in the case of Ta 2 O 5 on Si, after oxygen anneals values of about 3 nm are obtained (Lau, 2012). These values are close to the values for the case of Ta 2 O 5 films grown by thermal oxidation of Ta (Karmakov et al, 2012).…”

Section: Role Of the Interfacial Layersupporting

confidence: 64%

Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors

Novkovski

2014

Front. Mater.

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Replacement of the silicon dioxide thin films in metal-oxide-semiconductor structures for microelectronics with high-permittivity dielectrics (high-k ) is a crucial step in the further down-scaling of microelectronic devices. Technological development of the fabrication processes and better theoretical understanding of the physical phenomena in the considered structures are demanded simultaneously. Important issues concerning high-k are discussed in this paper and directions for further development are indicated. Further progress also requires better understanding of the physical phenomena appearing in stacked high-k /interfacial layer dielectrics.

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“…The main equation in ellipsometry is ρ(φ,λ) = tanψ eps(iΔ), where ψ and Δ are the measured ellipsometric angles and ρ is the Fresnel amplitude reflection coefficients for p-and spolarized light with incident angle φ and wavelength λ. In our study, experimental data from multi incident angle ellipsometry (MIAE) and variable angles spectroscopic ellipsometry (VASE) measurements of very thin layered samples are interpreted by using the algorithms commented in previous publications [3][4][5] for characterization of inhomogeneous in depth dielectric layers (figure 1). One substantial benefit of these algorithms is the reduced cross-correlations between the fitting parameters yielding a better fit quality and sensitivity.…”

Section: Ellipsometric Data Interpretationmentioning

confidence: 99%

Depth profiling of very thin HfO₂/Al₂O₃ stacks by ellipsometry

Karmakov

Paskaleva

Spassov

2022

J. Phys.: Conf. Ser.

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Ellipsometry (VASE and MAIE) with appropriate algorithms for experimental data interpretation was applied for quantitative characterization of thin Al2O3/HfO2 multilayers formed by atomic layer deposition (ALD) applicable to the fabrication of charge-trapping nonvolatile memories. A substantial benefit of the algorithms is the depth profiling of the stacks. In this work, the depth profiles were retrieved of the HfO2 constituent in very thin (Al2O3:HfO2) stacks embedded in thin Al2O3 surrounding layers. The peculiarities in the achieved depth profiles are used to determine the bi-layer blocks and their sub-layer thicknesses. The influence of a rapid thermal annealing in O2 on the depth profile and the sub-layer thicknesses is studied; substantial changes are thus revealed in the thickness and composition of the stacks. This information could be used in optimizing the dielectric and electrical properties of the stacks and multilayers.

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Interfacial layers in Ta2O5 based stacks and constituent depth profiles by spectroscopic ellipsometry

Cited by 6 publications

References 25 publications

Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta₂O₅/SiO_xN_y dielectric stack

Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta₂O₅/SiO_xN_y dielectric stack

Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors

Depth profiling of very thin HfO₂/Al₂O₃ stacks by ellipsometry

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Interfacial layers in Ta2O5 based stacks and constituent depth profiles by spectroscopic ellipsometry

Cited by 6 publications

References 25 publications

Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta2O5/SiOxNy dielectric stack

Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta2O5/SiOxNy dielectric stack

Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors

Depth profiling of very thin HfO2/Al2O3 stacks by ellipsometry

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Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta₂O₅/SiO_xN_y dielectric stack

Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta₂O₅/SiO_xN_y dielectric stack

Depth profiling of very thin HfO₂/Al₂O₃ stacks by ellipsometry