2011
DOI: 10.1109/led.2011.2161749
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Interfacial Microstructures and Thermodynamics of Thermosonic Cu-Wire Bonding

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Cited by 79 publications
(23 citation statements)
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“…[10][11][12][13] For example, bonding pressure of microelectronics packaging equipment needs to be applied to the stable load of 5N, [14][15][16][17][18] and damping force of micro-mechanical damping system is only 20N. 19,20 Recently, some small MRF dampers are developed, such as the RD-1097-01X damper is the smallest commercial damper, whose force is still 100N. 21 The structure of the traditional MRF damper is shown in Figure 1.…”
Section: Introductionmentioning
confidence: 99%
“…[10][11][12][13] For example, bonding pressure of microelectronics packaging equipment needs to be applied to the stable load of 5N, [14][15][16][17][18] and damping force of micro-mechanical damping system is only 20N. 19,20 Recently, some small MRF dampers are developed, such as the RD-1097-01X damper is the smallest commercial damper, whose force is still 100N. 21 The structure of the traditional MRF damper is shown in Figure 1.…”
Section: Introductionmentioning
confidence: 99%
“…The intermetallic phases Al 2 Au, AlAu 4 , or Al 3 Au 8 were formed at the Au-Al bond interface, and the thickness of the intermetallic phases was 100-300 nm. The microstructural characteristics of Au/Al bonded interfaces were examined [15][16][17]. Atomic diffusion took place at the bond interface to enhance the microstructural strength aspects, which increased beyond that of the base materials.…”
Section: Introductionmentioning
confidence: 99%
“…Copper foil will CONTACT Chuanjie Wang cjwang@hitwh.edu.cn; wcjhit@.com Color versions of one or more of the figures in the article can be found online at www.tandfonline.com/ginf. be a new kind of potential substrate materials if the corresponding bonding process is developed [7][8][9][10][11]. However, most current works have been done on seeking higher cost-efficiency wire material, designing bonding equipment of better performance, analyzing of bonding mechanism and optimizing of bonding process, and so on [12,13].…”
Section: Introductionmentioning
confidence: 99%