Interfacial profile of axial nanowire heterostructures in the nucleation limited regime

Leshchenko, Egor D.; Johansson, Jonas

doi:10.1039/d2ce01337a

Cited by 4 publications

(3 citation statements)

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“…To this end, the seminal work of Biefeld [ 129 ] remains the only approach to access the behavior of vapor–solid distributions under a varying V/III flux ratio, but this model is restricted to the reaction-limited growth kinetics of epilayers and is not adopted for nanowires. Time-dependent generalizations of compositional models, which are used to model the interfacial abruptness in III–V nanowire heterostructures [ 21 , 111 , 115 , 116 , 127 , 148 ], were beyond the scope of this work (a review can be found, for example, in Ref. [ 142 ]).…”

Section: Discussionmentioning

confidence: 99%

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An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires

Leshchenko

Dubrovskiı̆

2023

Nanomaterials

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Modeling of the growth process is required for the synthesis of III–V ternary nanowires with controllable composition. Consequently, new theoretical approaches for the description of epitaxial growth and the related chemical composition of III–V ternary nanowires based on group III or group V intermix were recently developed. In this review, we present and discuss existing modeling strategies for the stationary compositions of III–V ternary nanowires and try to systematize and link them in a general perspective. In particular, we divide the existing approaches into models that focus on the liquid–solid incorporation mechanisms in vapor–liquid–solid nanowires (equilibrium, nucleation-limited, and kinetic models treating the growth of solid from liquid) and models that provide the vapor–solid distributions (empirical, transport-limited, reaction-limited, and kinetic models treating the growth of solid from vapor). We describe the basic ideas underlying the existing models and analyze the similarities and differences between them, as well as the limitations and key factors influencing the stationary compositions of III–V nanowires versus the growth method. Overall, this review provides a basis for choosing a modeling approach that is most appropriate for a particular material system and epitaxy technique and that underlines the achieved level of the compositional modeling of III–V ternary nanowires and the remaining gaps that require further studies.

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Section: Discussionmentioning

confidence: 99%

“…The nucleation-limited model was used to describe the VLS growth of self-catalyzed [ 115 ] and Au-catalyzed [ 78 , 114 ] nanowires and nanowire heterostructures [ 115 , 116 ]. In Ref.…”

Section: Liquid–solid Incorporation Modelsmentioning

confidence: 99%

An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires

Leshchenko

Dubrovskiı̆

2023

Nanomaterials

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“…This means that unintentional compositional gradients typically form across axial heterostructures, limiting the interfacial width to several atomic planes (hereafter referred to as monolayers, MLs) at best. Successful attempts have been made at improving the interfacial sharpness by employing thinner nanowires, ,, lower growth temperatures, a higher Au concentration in Au-catalyzed nanowires, solid catalysts , or flux pulsing , (i.e., deposition of an element while the growth is temporarily interrupted). Among various material systems, GaAs/Al x Ga 1– x As heterostructures are a distinctively attractive choice for device applications due to their tunable electronic properties in combination with a negligible lattice mismatch between the two materials.…”

Section: Introductionmentioning

confidence: 99%

At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures

Hilliard,

Tauchnitz,

Hübner

et al. 2024

ACS Nano

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As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across heterointerfaces becomes paramount. Particularly in nanowire axial heterostructures, which are promising for a broad spectrum of nanotechnology applications, the achievement of sharp heterointerfaces has been challenging owing to peculiarities of the commonly used vapor−liquid−solid growth mode. Here, the grading of Al across GaAs/Al x Ga 1−x As/GaAs heterostructures in self-catalyzed nanowires is studied, aiming at finding the limits of the interfacial sharpness for this technologically versatile material system. A pulsed growth mode ensures precise control of the growth mechanisms even at low temperatures, while a semiempirical thermodynamic model is derived to fit the experimental Al-content profiles and quantitatively describe the dependences of the interfacial sharpness on the growth temperature, the nanowire radius, and the Al content. Finally, symmetrical Al profiles with interfacial widths of 2−3 atomic planes, at the limit of the measurement accuracy, are obtained, outperforming even equivalent thin-film heterostructures. The proposed method enables the development of advanced heterostructure schemes for a more effective utilization of the nanowire platform; moreover, it is considered expandable to other material systems and nanostructure types.

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Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

Yan,

Li,

Zhang

2025

Nanoscale Horiz.

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Interfacial profile of axial nanowire heterostructures in the nucleation limited regime

Abstract: Heterostructured nanowires exhibit unique physical and electronic properties and are most commonly grown by the vapor-liquid-solid mechanism. Some of these properties are related to the interfacial abruptness of the heterointerface...

Cited by 4 publications

References 41 publications

An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires

An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires

At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures

Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

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