Interfacial Reaction Growth: Morphology, Composition, and Structure Controls in Preparation of Crystalline ZnxAlyOz Nanonets

Wang, Yu; Liao, Qing; Lei, Hongshuai; Zhang, Xiaoping; Zhang, Jianping; Wu, Kai

doi:10.1002/adma.200502154

Cited by 44 publications

(46 citation statements)

References 22 publications

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“…Hence, intermediate formation of ZnTe is necessary. We suggest that directly after the formation of ZnTe the telluride is oxidized to tellurium and, similar to the report of Wang et al [43,44], freshly formed ZnO reacts with the pore wall (Al 2 O 3 ) to yield ZnAl 2 O 4 . The tellurium formed in this reaction at 500 8C is in its liquid state and slow cooling after the thermolytic step promotes the formation of the single-crystalline Te core.…”

supporting

confidence: 65%

“…It is reasonable to assume that the reactivity of AAO, and therefore the way in which single-source-precursors infiltrated into its pores react, can be adjusted by proper selection of the reaction conditions. Nevertheless, only little effort has been devoted to inducing precursors to react with the hard template in a specific way depending on the reaction conditions [32,33,[42][43][44]. For example, Wang et al had AAO react with elemental zinc prepared in situ by H 2 -reduction of ZnS and obtained ZnAl 2 O 4 and ZnO nanostructures [43,44].…”

mentioning

confidence: 98%

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Template‐controlled thermolysis of single‐source‐precursors

Erk

Wehrspohn

Steinhart

et al. 2010

Physica Status Solidi (b)

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Shape-defining hard templates containing arrays of aligned cylindrical nanopores have been exploited as a powerful tool in the synthesis of tubular; rod-like, and core shell-type one-dimensional (ID) nanostructures consisting of inorganic materials. Gaining control over the crystallinity, the crystal orientation, and the internal morphology of the products is a challenging task and obviously turns out to be crucial for adjusting the properties of the nanostructures. Template-controlled thermolysis of single-source-precursors inside nanoporous hard templates is a versatile route toward single-crystalline nanorods, but also polycrystalline and complex nanostructures can be produced. By alterations of the 'single-source-precursors and reaction conditions and by exploiting the hard templates as reactants, several target materials, including compound semiconductors, metals, and spinel-type materials of varying crystallinity and morphology can be obtained. Moreover, core-shell nanowires have been accessible in this way. synthesized inside macroporous silicon or mesoporous alumina templates exhibit large aspect ratios and high uniformity in size and shape. Therefore the template-assisted-thermolysis of single-source-precursors represents a well-defined platform toward the straightforward synthesis and characterization of ID inorganic nanostructures

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supporting

confidence: 65%

mentioning

confidence: 98%

Template‐controlled thermolysis of single‐source‐precursors

Erk

Wehrspohn

Steinhart

et al. 2010

Physica Status Solidi (b)

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“…In those fabrication processes, however, there exist disadvantages such as high cost, low efficiency and large amount of time consumption. To improve the fabrication, we have developed a novel approach combining interfacial reaction growth (IRG) [22] and epitaxial growth to produce zinc aluminate and zinc oxide nanonets on a porous anodic aluminum oxide (AAO) template [23][24][25]. This IRG approach has also been applied to prepare metallic Mo and Cu nanonets [26].…”

Section: Introductionmentioning

confidence: 99%

A Ga2O·11Al2O3 nanonet prepared by interfacial reaction growth approach and its application in fabricating GaN nanowires

Wang

Wen

2010

Sci. China Chem.

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“…It can be used as a transparent conductor, optical material and dielectric material, 11,12 and it is suitable for UV photoelectronic applications. 13 Simultaneously, much work has been done on the structural, electronic and optical properties of MgAl 2 O 4 and ZnAl 2 O 4 over the past few years. [14][15][16][17][18][19][20][21][22][23][24][25][26][27] The effect of point vacancies on the spectral properties of MgAl 2 O 4 has been studied by S. L. Jiang et al 14 They revealed that the absorption peak at 5.3 eV is attributed to the neutral oxygen vacancy V o 0 , while two peaks at 3.2 eV and 4.75 eV are attributed to the 1+ charged oxygen vacancy V o 1 + .…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of the spinel oxides MgxZn1-xAl2O4 by first-principles calculations

Xiang¹,

Zhang²,

Lü³

et al. 2017

Mater. Tehnol.

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The structural, electronic and optical properties of perfect MgxZn1-xAl2O4 oxides have been studied by first-principles calculations within the generalized gradient approximation of the density functional theory. It is interesting to note that a linear increase of cell volume (V) with increasing doping amount (x) occurs. The band gap increases in the series from 3.851 eV to 5.079 eV, which is in agreement with theoretical and experimental values. In addition, a blue shift of the absorption shoulder is observed in the UV region with the increase of x, as predicted by the imaginary part e2(w) of the dielectric function at zero frequency as well as bandgap. This can be explained by the threshold of the electronic transition from O-2p to the empty Mg-3p electron states due to the substitution of Zn with Mg. The real part e1(w) of the dielectric function located at zero frequency has a square fit relationship with refractive index n(0), which is 1.71-1.77 from x=0 to x=1. The energy-loss function shows that the replacement of Zn by Mg is responsible for a decrease in the intensity of the sharp peaks. The reflectivity shows that a higher coefficient of reflectivity (R(0)) at zero frequency corresponds to a smaller bandgap. Keywords: electronic transitions, dielectric function, refractive index, adsorption shoulder Preiskovali smo strukturne, elektronske in opti~ne lastnosti idealnih MgxZn1-xAl2O4 oksidov, izpeljane iz teoreti~nih osnov znotraj posplo{ene gradientne aproksimacije funkcionalne teorije gostote. Opazili smo linearno pove~anje celi~nega volumna (V) z nara{~ajo~o koncentracijo Mg (x). [irina prepovedanega pasu nara{~a od 3.851 eV to 5.079 eV v skladu s teoreti~nimi in eksperimentalnimi vrednostmi. Poleg tega ob nara{~anju dele`a Mg opazimo modri premik dodatnega absorpcijskega vrha v UV obmo~ju, kakor napovedujeta vrednosti imaginarnega dela e2(w) dielektri~ne funkcije pri frekvenci 0 in prepovedanega pasu. To je mogo~e pojasniti s pragom elektronskega prehoda elektronov iz O-2p v prazen Mg-3p zaradi nadomestitve Zn z Mg. Kvadrat realnega dela e1(w) dielektri~ne funkcije pri frekvenci 0 se ujema z lomnim koli~nikom n(0), ki je 1.71-1.77 za x=0 do x=1. Funkcija izgube energije, ka`e, da zamenjava Zn z Mg povzro~a zmanj{anje intenzitete ostrih vrhov. Reflektivnost ka`e, da vi{ji koeficient refleksije (R(0)) pri frekvenci 0 odgovarja manj{i {irini prepovedanega pasu. Klju~ne besede: prehodi elektronov, dielektri~na funkcija, lomni koli~nik, dodatni absorpcijski vrh

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Interfacial Reaction Growth: Morphology, Composition, and Structure Controls in Preparation of Crystalline Zn_xAl_yO_z Nanonets

Cited by 44 publications

References 22 publications

Template‐controlled thermolysis of single‐source‐precursors

Template‐controlled thermolysis of single‐source‐precursors

A Ga2O·11Al2O3 nanonet prepared by interfacial reaction growth approach and its application in fabricating GaN nanowires

Electronic and optical properties of the spinel oxides MgxZn1-xAl2O4 by first-principles calculations

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