Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors

Abstract

A recently developed procedure for solving the stationary Schrodinger equation in matrix representation form is proved to be useful in calculating quasibound energy levels. Results for a simple quantum mechanical model with potential energy function V =r-' + Ar ( A < 0) are shown to be very accurate.

Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

“…This, in turn, may disturb the in and out diffusion process that takes place in the device particularly at interfaces and towards the bulk and hence provides a sudden shift in the resistivity/conductivity behavior at a higher annealing temperature. Such behavior and trends in form of measurement profile for these structures are known and discussed in related studies [18][19][20]. Electrical measurements were performed to determine the resistance of the atomic layer deposited TiN thin films.…”

Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film

“…2,3 However, it has been reported that high-k species such as Hf and La atoms can diffuse even into gate electrodes during high-temperature annealing. [4][5][6] Our previous study, focusing on the La-induced interface dipole in TiN/HfLaSiO/SiO 2 /Si gate stacks, showed the upward diffusion of La at temperatures above 900 C, at which point the SiO 2 underlayer thickness increased. 7 On the basis of this result, we speculated that the upward diffusion is driven by SiO 2 growth and can thus be suppressed by hampering this growth.…”

Oxygen-induced high-k degradation in TiN/HfSiO gate stacks

“…In addition to interfacial SiO 2 growth, it has been reported that metal elements such as Hf and La atoms in high-k layers diffuse into gate electrode after high-temperature activation annealing [1][2][3][4]. Consequently, a loss of leakage reduction merit due to permittivity lowering of Hf-based high-k layer has been pointed out [4].…”