Interfacial reactions and mechanical properties of W–SiC in-situ joints for plasma facing components

Son, S.J; Park, K.H; Katoh, Yutai; Kohyama, Akira

doi:10.1016/j.jnucmat.2004.04.285

Cited by 48 publications

(29 citation statements)

References 16 publications

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“…In addition, there are also some tungsten silicide phases (W 5 Si 3 and WSi 2 ) identified, but it is somewhat difficult to identify the exact tungsten silicide phase since d-spacing values for these silicides are too close to each other. However, W 5 Si 3 phase, which has a body-centered tetragonal Bravais lattice and I4/mcm space group with lattice parameters a = 0.961 nm and b = 0.496 nm [25] seems more likely to be stable in accordance with the observation of Seng and Barnes [26] [28]. Also, Goesmann and Fetzer [29,30] showed that W 2 C and W 5 Si 3 were stable phases above 1200 • C and 1500 • C in W-SiC system, respectively.…”

Section: Microstructural Characterizationsupporting

confidence: 59%

Characterization investigations during mechanical alloying and sintering of W–20 vol% SiC composites

Coşkun¹,

Öveçoğlu²,

Özkal³

et al. 2010

Journal of Alloys and Compounds

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a b s t r a c tThe effect of mechanical alloying and the sintering regime on the microstructural and the physical properties of W-SiC composites were investigated. Powder mixtures of W-20 vol.% SiC were mechanically alloyed (MA'd) using a Spex mill for 3 h, 6 h and 24 h. MA'd powders were characterized by Laser Diffraction Particle Size Analyzer, SEM and XRD investigations. MA'd W-20 vol.% SiC powder composites were sintered under inert Ar and reducing H 2 gas conditions at 1680• C and 1770• C for 1 h. The microstructural and mechanical characterizations of the sintered samples were carried out by scanning electron microscope (SEM) and X-ray diffraction (XRD) and Vickers Hardness analyses. The addition of SiC remarkably increases the hardness of the composites. Hardness is also increased with decreasing grain size and increasing amount of MA.

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Section: Microstructural Characterizationsupporting

confidence: 59%

Characterization investigations during mechanical alloying and sintering of W–20 vol% SiC composites

Coşkun¹,

Öveçoğlu²,

Özkal³

et al. 2010

Journal of Alloys and Compounds

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“…The GIXRD spectra of the as-deposited sample showed that reactions had taken place, with the presence of W 5 Si 3 , WO 3 and WC. The surface of the as-deposited samples analysed with SEM showed a fairly uniform W thin film, with tiny grains that were evenly distributed.…”

Section: Discussionmentioning

confidence: 99%

“…[1][2][3]. This is due to its high thermal stability, high thermal conductivity, electric field strength, resistance against aggressive chemicals and abrasion [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…This can be achieved by adding a coating layer on the SiC layer of the TRISO particle [12], [13]. The use of tungsten (W) as a suggested coating material has good advantages such as a low sputtering yield, inherent heat resistance, high thermal conductivity, excellent corrosion and abrasion resistance [3]. The enhancement of the shielding effect of SiC will play a remarkable role in terms of improving the SiC layer strength.…”

Section: Introductionmentioning

confidence: 99%

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The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC

Thabethe

Hlatshwayo

Njoroge

et al. 2016

Vacuum

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Tungsten (W) film was deposited on bulk single crystalline 6H-SiC substrate and annealed in H 2 ambient at temperatures of 700 ºC, 800 ºC and 1000 ºC for 1 hour. The resulting solidstate reactions, phase composition and surface morphology were investigated by Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD) and scanning electron microscopy (SEM) analysis techniques. These results are compared with the vacuum annealed results reported in our earlier work. As-deposited RBS results indicated the presence of W and O 2 in the deposited thin film, the GIXRD showed the presence of W, The SEM micrographs of the as-deposited samples indicated the W thin film had a uniform surface with small grains. Annealing at 800 ºC led to the agglomeration of W grains into clusters making the surface rough.

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“…Tungsten (W) is one of the preferred ohmic contact metals with SiC for semiconductor device applications due to its splendid chemical, physical and mechanical properties; such as good heat resistance, low resistivity, high thermal conductivity, irradiation resistance, exceptional corrosion and abrasion resistance [12][13][14][15][16]. In HTGRs, W has been considered to play a protective role for SiC, which could be added as one of the layers on the TRISO particle [12,17].…”

Section: Introductionmentioning

confidence: 99%

Interfacial reactions and surface analysis of W thin film on 6H-SiC

Thabethe

Hlatshwayo

Njoroge

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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Tungsten (W) thin film was deposited on bulk single crystalline 6H-SiC substrate and annealed in vacuum at temperatures ranging from 700 to 1000 ºC for 1 hour. The resulting solid-state reactions, phase composition and surface morphology were investigated by Rutherford backscattering spectroscopy (RBS), grazing incidence X-ray diffraction (GIXRD) and scanning electron microscopy (SEM). XRD was used to identify the phases present and to confirm the RBS results. The RBS spectra were simulated using the RUMP software in order to obtain the deposited layer thickness, composition of reaction zone and detect phase formation at the interface. RBS results showed that interaction between W and SiC started at 850 °C. The XRD analysis showed that WC and CW 3 were the initial phases formed at 700 ºC and 800 °C. The concentration of the phases was however, too low to be detected by RBS analysis. At temperatures of 900 °C and 1000 °C, W reacted with the SiC substrate and formed a mixed layer containing a silicide phase (WSi 2 ) and a carbide phase (W 2 C). The SEM images of the as-deposited samples showed that the W thin film had a uniform surface with small grains. The W layer became heterogeneous during annealing at higher temperatures as the W granules agglomerated into island clusters at temperatures of 800 °C and higher.

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Interfacial reactions and mechanical properties of W–SiC in-situ joints for plasma facing components

Cited by 48 publications

References 16 publications

Characterization investigations during mechanical alloying and sintering of W–20 vol% SiC composites

Characterization investigations during mechanical alloying and sintering of W–20 vol% SiC composites

The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC

Interfacial reactions and surface analysis of W thin film on 6H-SiC

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