Interfacial Reactions in GaSb/Co Metallization Contacts during Thermal Processing

Kodentsov, AA Alexander; Markovski, SL Slobodan; Cserháti, Csaba; Loo, van Fjj Frans

doi:10.1021/cm021265a

Cited by 7 publications

(2 citation statements)

References 22 publications

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“…It was demonstrated that the appearance of structures periodic in time and space during the reaction between SiC and non-carbide forming metals originates from a repeating separation of a part of the band of interconnected Carbon-particles from the part adhering to the SiC-substrate [38][39][40][41][42][43]. In other words, mechanical aspects clearly play a role.…”

Section: Periodic Pattern Formation In Metal-ceramic Reactionsmentioning

confidence: 99%

Diffusion-Limited Reactions of Non-Oxide Ceramics with Transition Metals

Kodentsov

2019

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Thermodynamic and diffusion models are given to describe morphological evolution of the reaction zone during diffusion-limited interaction between non-oxide Si-containing ceramics (SiC and Si3N4) and transition metals (Cr, Mo, Ti, Ni, Co, Pt). In the case of diffusion-controlled process in the ternary metal-ceramic systems, reaction phenomena can be rationalized using chemical potential diagrams. However, in some cases, a periodic layered morphology is found in the transition zone, which is not fully understood, and it is difficult to predict a priori. Silicide formation in systems based on dense Silicon Nitride and non-nitride forming metals can be explained by assuming a nitrogen pressure build-up at the contact surface. This pressure determines the chemical potential of Silicon at the interface, and hence, the product phases in the diffusion zone. Traces of Oxygen in the ambient atmosphere might affect the interaction in non-oxide ceramic/transition metal systems. The thermodynamic stability of the condensed phases in the systems where volatile species may form can be interpreted using predominant area-type diagrams.

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Section: Periodic Pattern Formation In Metal-ceramic Reactionsmentioning

confidence: 99%

Diffusion-Limited Reactions of Non-Oxide Ceramics with Transition Metals

Kodentsov

2019

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“…Their investigations were concerned with the reactions between Silicon Carbide (SiC) and Ni-based superalloys. Since then, a great number of articles dealing with the periodic layer formation in diffusion couples based on SiC and various non-carbide forming transition metals have appeared [49][50][51][52][53][54][55][56][57][58][59][60][61][62][63].…”

Section: Diversity Of Forms and Variations Of Periodic Layered Micros...mentioning

confidence: 99%

Periodic Layer Formation during Multiphase Diffusion in Silicide Systems

Kodentsov

Wojewoda-Budka

Wierzbicka-Miernik

2019

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Periodic layered morphology may occur during displacement solid-state reactions in ternary (and higher-order) silicide and other material systems. This periodic layered structure consists of regularly spaced layers (bands) of particles of one reaction product embedded in a matrix phase of another reaction product. The number of systems that is known to produce the periodic layered structure is rather small but increasing and includes metal/metal and metal/ceramic semi-infinite diffusion couples. The experimental results on different systems, where the periodic pattern formation has been observed are systematized and earlier explanations for this peculiar diffusion phenomenon are discussed. Formation of the reaction zone morphologies periodic in time and space can be considered as a manifestation of the Kirkendall effect accompanying interdiffusion in the solid state. The patterning during multiphase diffusion is attributed to diverging vacancy fluxes within the interaction zone. This can generate multiple Kirkendall planes, which by attractingin situ-formed inclusions of “secondary-formed phase” can result in a highly patterned microstructure.

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Interfacial Reactions in GaSb/Co Metallization Contacts During Thermal Processing.

Kodentsov¹,

Markovski²,

Cserháti³

et al. 2003

ChemInform

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Interfaces Interfaces G 6000Interfacial Reactions in GaSb/Co Metallization Contacts During Thermal Processing. -As revealed by XRD, SEM, and TEM, interfacial reactions between Co and single crystal GaSb take place at 500°C. No ternary phases exist in the system at this temperature. The cubic CoGa and CoSb 3 phases are the dominant growing compounds in the semi-infinite bulk as well as in thin-film reaction couples, the latter intermetallic being formed next to the GaSb substrate. When the Co film is consumed by the reaction, the final configuration of the metallization layer GaSb/CoSb 3 /CoGa is achieved. This information is important in designing uniform, stable contacts for the metallization of GaSb. -(KODENTSOV*, A. A.; MARKOVSKI, S. L.; CSERHATI, C.; VAN LOO, F. J. J.; Chem. Mater. 15 (2003) 1, 218-224; Lab. Solid State Chem. Mater. Sci., COBRA Inter-Univ. Res. Inst. Commun. Technol., Eindhoven Univ. Technol., NL-5600 MB Eindhoven, Neth.; Eng.) -W. Pewestorf

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Interfacial Reactions in GaSb/Co Metallization Contacts during Thermal Processing

Cited by 7 publications

References 22 publications

Diffusion-Limited Reactions of Non-Oxide Ceramics with Transition Metals

Diffusion-Limited Reactions of Non-Oxide Ceramics with Transition Metals

Periodic Layer Formation during Multiphase Diffusion in Silicide Systems

Interfacial Reactions in GaSb/Co Metallization Contacts During Thermal Processing.

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