2019
DOI: 10.1021/acs.nanolett.9b01658
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Interfacial States and Fano–Feshbach Resonance in Graphene–Silicon Vertical Junction

Abstract: ACS Paragon Plus Environment Nano Letters 2 spectrum) and the lateral band structure of graphene (continuous energy spectrum) result in Fano-Feshbach resonance. Our results show that the conventional description of interfacial interaction in low-dimensional systems is valid only in considering the lateral band structure and its density-of-states and is incomplete for the ease of vertical transport. Our experimental observation and theoretical explanation provide more insightful understanding on various interfa… Show more

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Cited by 3 publications
(2 citation statements)
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“…The existence of multiple chemical bond coupling at the buffer layer of graphene/SiC interface generates plenty of interfacial quantum states and lead to the carrier traps, which is beneficial for decreasing the dark current. [ 49 ] Inset in Figure 1d shows the low energy electron diffraction (LEED) of graphene/SiC (0001) junction, where the first order diffraction spots of graphene and SiC are marked by the green circle and the red circle, respectively. The other spots marked by yellow circles represent the (63×63${\mathrm{6}}\sqrt {\mathrm{3}} {\mathrm{\ \times \ 6}}\sqrt {\mathrm{3}} $) R30° reconstructions of SiC surface.…”
Section: Resultsmentioning
confidence: 99%
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“…The existence of multiple chemical bond coupling at the buffer layer of graphene/SiC interface generates plenty of interfacial quantum states and lead to the carrier traps, which is beneficial for decreasing the dark current. [ 49 ] Inset in Figure 1d shows the low energy electron diffraction (LEED) of graphene/SiC (0001) junction, where the first order diffraction spots of graphene and SiC are marked by the green circle and the red circle, respectively. The other spots marked by yellow circles represent the (63×63${\mathrm{6}}\sqrt {\mathrm{3}} {\mathrm{\ \times \ 6}}\sqrt {\mathrm{3}} $) R30° reconstructions of SiC surface.…”
Section: Resultsmentioning
confidence: 99%
“…Figure a shows that the minimum dark current of the device with 6 µm interdigital interval is 5.2 × 10 −14 A at 30 V bias, which is attributed to the fact that the interface states formed at SiC/graphene heterojunction could trap the electron. [ 49 ] Moreover, the grating structure could suppress drift of the carriers. The dark current decreases when the interdigital interval increases from 6 to 10 µm, due to the increase of transport distance of charge carriers, and part of the carriers are recombined before reaching electrodes.…”
Section: Resultsmentioning
confidence: 99%