Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells

Adhikari, Nirmal; Dubey, Ashish; Khatiwada, Devendra; Mitul, Abu Farzan; Wang, Qi; Venkatesan, Swaminathan; Iefanova, Anastasiia; Zai, Jiantao; Qian, Xuefeng; Kumar, Mahesh; Qiao, Qiquan

doi:10.1021/acsami.5b09797

Cited by 101 publications

(89 citation statements)

References 34 publications

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“…The photocurrent distribution maps of CH 3 NH 3 SnI 3 is in agreement with the current distribution of lead-based perovskites. 22,23 It was earlier observed that the higher short-circuit current appears near GBs of CH 3 NH 3 PbI 3 rather than within grain interior. 22 Comparatively low local current was measured in the vicinity of GB 2 where there was a dip in the film morphology.…”

Section: -9mentioning

confidence: 97%

“…Based on CS-AFM analysis and local current mapping, it was noticed that the photocurrent is most prominent around grain boundaries for both samples which is in agreement with photocurrent distribution for lead based perovskites. 23 The increase in carrier mobility in DMF based sample may be attributed to the higher crystallinity of the film, allowing an efficient pathway for charge transport, thereby improving charge collection.…”

Section: -12mentioning

confidence: 99%

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Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

et al. 2016

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Lead free CH3NH3SnI3 perovskite thin film was prepared by low temperature solution processing and characterized using current sensing atomic force microscopy (CS-AFM). Analysis of electrical, optical, and optoelectrical properties reveals unique p-type semiconducting nature and metal like conductivity of this material. CH3NH3SnI3 film also showed a strong absorption in visible and near infrared spectrum with absorption onset of 1.3 eV. X-ray Diffraction analysis and scanning electron microscopy (SEM) confirmed a structure of this compound and uniform film formation. The morphology, film uniformity, light harvesting and electrical properties strongly depend on preparation method and precursor solution. CH3NH3SnI3 films prepared based on dimethylformamide (DMF) showed higher crystallinity and light harvesting capability compared to the film based on combination of dimethyl sulfoxide (DMSO) with gamma-butyrolactone (GBL). Local photocurrent mapping analysis showed that CH3NH3SnI3 can be used as an active layer and have a potential to fabricate lead free photovoltaic devices.

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Section: -9mentioning

confidence: 97%

Section: -12mentioning

confidence: 99%

Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

et al. 2016

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“…The morphologies of the films annealed at different temperatures for 5 min were shown in Figure 2a. [24][25][26] Though the crystalline of the films can be further improved as the film is selenized at 340-380 °C, the quality of PN junction is gradually destroyed. Subsequently, when the selenization temperature increases to 300 °C, the small grains gradually fuse together with emerging boundaries.…”

Section: Growth Of Bandgap Gradient Sb 2 (Sse) 3 Filmmentioning

confidence: 99%

Over 6% Certified Sb₂(S,Se)₃ Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization

Wang

Chen

et al. 2018

Adv Elect Materials

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eV), [1][2][3] remarkable absorption coefficient (≈10 5 cm −1 ), [4,5] excellent stability, and low-toxicity component. To promote the power conversion efficiency, many methods have been successfully applied to fabricate Sb 2 (S x ,Se 1-x ) 3 solar cells. For example, the rapid thermal evaporation (RTE) method [6] have been gathered many attentions for the fabrication of Sb 2 Se 3 solar cells. Recently, Tang and co-workers used a novel vapor transport deposition (VTD) way to refresh the recorded efficiency of Sb 2 Se 3 solar cell to 7.6%, [7] which has been made a great progress since Sb 2 Se 3 was successfully achieved a power conversion efficiency (PCE) of 0.03% in 2002. [8] On the other hand, Choi et al. have achieved a PCE of 7.5% [9] for Sb 2 S 3 by chemical bath deposition (CBD). Although the VTD and CBD methods have achieved impressive efficiency over 7%, a number of processing issues arise in these approaches. For example, VTD deposition processes are complex and expensive. While the nonvacuums CBD method also has weaknesses such as (i) the film prepared from CBD method is tend to be amorphous; [8,10] (ii) the Sb 2 S 3 film prepared by CBD method is antimony rich which results in a higher mean coordination number (MCN) than the stoichiometric Sb 2 S 3 . It will make it too rigid to flatten out after the annealing step; [11] (iii) the Sb 2 S 3 film prepared by CBD method inevitably includes impurities such as SbOCl, Sb 2 O 3 , and Sb 2 (SO 3 ) 3 . [12][13][14] Meanwhile, although the crystalline of the film fabricated by RTE or VTD is promising, the compactness of the absorber needs a further improvement. Thus, seeking for an effective and easy-handle nonvacuum approach to improve Sb 2 (S x ,Se 1-x ) 3 thin film solar cells is urgently needed.Since the hydrothermal method is a useful method in thin film preparation, the quality and homogeneity of the film deposited by this method is remarkable, which is expected to be able to solve the problem mentioned above and cut down the cost of fabrication. Liu et al. have taken this method to prepare the Sb 2 S 3 thin films, but there is no device reported. [15] In our previous work, double buffer layer was used to tune the band align and reduce recombination, which has achieved V oc as high as 792 mV based on hydrothermal derived Sb 2 (S x ,Se 1-x ) 3 solar cell. [16] But the thick buffer layer (60 nm TiO 2 + 60 nm CdS) inevitably increases the R s of device and decreases the transmittance as well, both of which will reduce J sc and PCE. Besides, the formation mechanism for Sb 2 S 3 thin films based Antimony sulfide-selenide Sb 2 (S,Se) 3 as a promising absorber material has drawn extensive attention owing to its rewarding photoelectric properties, low toxicity, and earth abundant components. Here, an available and highly effective method, in situ hydrothermal growth accompanied with postselenization, is successfully applied to fabricate Sb 2 (S,Se) 3 solar cells. The rationale for the preparation of Sb 2 S 3 precursors by the hydrothermal method is discussed, and ...

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“…The CuI layer on a spin-coated TiO 2 compact layer might not allow extraction of electrons from perovskite to TiO 2 due to the higher conduction-band energy level (≈−2.2 eV) [26] than that of perovskite (≈−3.93 eV). [28] Therefore, if the surface of the spin-coated TiO 2 compact layer is only partially coated by CuI, the p-type character of CuI consisting of small-sized Cu + and large-sized I − (e.g., Li-TFSI) could act as PbI 2 (Pb 2+ + 2I − ) and Li + cation at the interface between TiO 2 ETL and perovskites as mentioned above, [27,28] simultaneously. [28] Therefore, if the surface of the spin-coated TiO 2 compact layer is only partially coated by CuI, the p-type character of CuI consisting of small-sized Cu + and large-sized I − (e.g., Li-TFSI) could act as PbI 2 (Pb 2+ + 2I − ) and Li + cation at the interface between TiO 2 ETL and perovskites as mentioned above, [27,28] simultaneously.…”

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p‐Type CuI Islands on TiO₂ Electron Transport Layer for a Highly Efficient Planar‐Perovskite Solar Cell with Negligible Hysteresis

Byranvand

Kim

Song

et al. 2017

Advanced Energy Materials

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Perovskite solar cells (PSCs) have attracted much attention owing to their high power conversion efficiencies (PCEs) and relatively low fabrication costs compared with conventional silicon-based solar cells. [1,2] In a planar n-i-p-type PSC, a perovskite layer is sandwiched between a fluorine-doped tin oxide (FTO) glass substrate with an electron transport layer (ETL) and a hole transport layer (HTL) with metal electrode, respectively. The ETL plays an important role in electron extraction and hole blocking. A compact TiO 2 layer is widely used [3] as the ETL in PSCs owing to its excellent optical transmittance and superior chemical stability at high temperatures in air, although various ETL materials including metallic salts, [4] transition metal oxides, [5,6] or organic materials [7,8] have been reported. In addition, the TiO 2 compact layer can be easily prepared from its precursor solution via a sol-gel process. By employing such Compact TiO 2 is widely used as an electron transport material in planarperov skite solar cells. However, TiO 2 -based planar-perovskite solar cells exhibit low efficiencies due to intrinsic problems such as the unsuitable conduction band energy and low electron extraction ability of TiO 2 . Herein, the planar TiO 2 electron transport layer (ETL) of perovskite solar cells is modified with ionic salt CuI via a simple one-step spin-coating process. The p-type nature of the CuI islands on the TiO 2 surface leads to modification of the TiO 2 band alignment, resulting in barrier-free contacts and increased open-circuit voltage. It is found that the polarity of the CuI-modified TiO 2 surface can pull electrons to the interface between the perovskite and the TiO 2 , which improves electron extraction and reduces nonradiative recombination. The CuI solution concentration is varied to control the electron extraction of the modified TiO 2 ETL, and the optimized device shows a high efficiency of 19.0%. In addition, the optimized device shows negligible hysteresis, which is believed to be due to the removal of trap sites and effective electron extraction by CuI-modified TiO 2 . These results demonstrate the hitherto unknown effect of p-type ionic salts on electron transport material.

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Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells

Cited by 101 publications

References 34 publications

Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

Over 6% Certified Sb₂(S,Se)₃ Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization

p‐Type CuI Islands on TiO₂ Electron Transport Layer for a Highly Efficient Planar‐Perovskite Solar Cell with Negligible Hysteresis

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Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells

Cited by 101 publications

References 34 publications

Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

Over 6% Certified Sb2(S,Se)3 Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization

p‐Type CuI Islands on TiO2 Electron Transport Layer for a Highly Efficient Planar‐Perovskite Solar Cell with Negligible Hysteresis

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Product

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Over 6% Certified Sb₂(S,Se)₃ Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization

p‐Type CuI Islands on TiO₂ Electron Transport Layer for a Highly Efficient Planar‐Perovskite Solar Cell with Negligible Hysteresis