Interfacial Triggering of Conductive Filament Growth in Organic Flexible Memristor for High Reliability and Uniformity

Abstract

We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode–polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.

Flexible Artificial Sensory Systems Based on Neuromorphic Devices

“…The memristive switching operation of ECM-based 2T flexible synaptic devices is caused by the migration and redox of metal ions under the applied bias. A typical ECM device exhibits a metal-ion conductor-metal (MIM) structure including an anode (active metals such as Ag and Cu), an electrolyte layer, and a cathode (e.g., Pt, Au, TiN, and ITO) (Figure a). When a positive voltage is applied to the device, oxidation reactions will happen at the anode interface.…”

Research Progress of Biomimetic Memristor Flexible Synapse

“…At the bending radius of u to 5 mm, mechanically deformed devices continue to work as stable bipolar memorie During the repeated cycles of bending and relaxation of rb = 5 mm, the current level of th device at LRS and HRS states remained good, and there was no degradation in 2.8 × 10 3 Compared with the traditional device without ILP, the flexible memristor with IL works stably at repeated bending-straightening deformation and provides higher elect cal performance (uniformity, reliability, and operating currents). Lee et al [54] introduce the ITSs for interfacial triggering and developed a flexible memristor with high reliabili and superior uniformity. The device exhibits stable bipolar memory at bending defo mation with a radius of curvature of rb = 5 mm, bending and relaxing twice in each interv of 500 s, and the current level at each state was maintained (Figure 5).…”

“…Compared with the traditional device without ILP, the flexible memristor with ILP works stably at repeated bending-straightening deformation and provides higher electrical performance (uniformity, reliability, and operating currents). Lee et al [54] introduced the ITSs for interfacial triggering and developed a flexible memristor with high reliability and superior uniformity. The device exhibits stable bipolar memory at bending deformation with a radius of curvature of r b = 5 mm, bending and relaxing twice in each interval of 500 s, and the current level at each state was maintained (Figure 5).…”

Configurable switching behavior in polymer-based resistive memories by adopting unique electrode/electrolyte arrangement

“…22,23 In ECM cells, the subsequent growth and annihilation of conducting metallic bridge by the electrochemically active elements (such as Ag or Cu) in the dielectric polymer interface can be responsible for the ON and OFF state during respective biasing conditions. [24][25][26] Incorporating electrochemically active elements either in electrode or electrolyte can mostly induce the lament growth and bistable resistive switching behavior. Though, the lament growth occurs randomly as stochastic events that determines the resistive switching characteristics such as forming voltage, SET and RESET voltages, ON and OFF resistance values.…”