2018
DOI: 10.1039/c8tc03286f
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Interlayer coupling and external electric field tunable electronic properties of a 2D type-I α-tellurene/MoS2 heterostructure

Abstract: Applying an external electric field can induce a transition from a type-I to a type-II band alignment in an α-tellurene/MoS2 heterostructure.

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Cited by 60 publications
(25 citation statements)
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“…Electronic property modulation on low-dimensional materials like 2D materials is a hot issue and has been widely investigated. For instance, application of an electric field has been found to modulate the band gap of the GeC bilayer . As reported, an external electric field can also tune the band gap of the SnC/BAs heterostructure linearly and induce a semiconductor-to-metal transition in the presence of a strong electric field .…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Electronic property modulation on low-dimensional materials like 2D materials is a hot issue and has been widely investigated. For instance, application of an electric field has been found to modulate the band gap of the GeC bilayer . As reported, an external electric field can also tune the band gap of the SnC/BAs heterostructure linearly and induce a semiconductor-to-metal transition in the presence of a strong electric field .…”
Section: Introductionmentioning
confidence: 99%
“… 16 Moreover, type-I to type-II or indirect-to-nearly direct transition has been found with an external electric field applied to a 2D type-I α-tellurene/MoS 2 heterostructure. 17 In addition to theoretical investigations, electric field modulation of the band gap has also been studied experimentally, such as bilayer graphene. 26 In this study, although certain manipulated high electric field strength is hardly to be achieved under existing experimental conditions, the behavioral tendencies can be exhibited.…”
Section: Introductionmentioning
confidence: 99%
“…[12][13][14] Whereas, the vdW heterostructures can be predicted theoretically by stacking 2DMs on top of others. [15][16][17] It is clear that the 2DMs are held together in their vdW heterostructures by the weak vdW interactions, which keep the vdW heterostructures energetically stable and give rise to easy exfoliation. All the above ndings demonstrate that the vdW heterostructures have emerged as promising candidates for a variety of highperformance optoelectronic and nanoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, a new family of 2D materials that consists only of tellurium, called tellurene, has been predicted theoretically , and successfully fabricated by various experimental procedures, such as solution phase synthesis, molecular beam epitaxy, and so on. Tellurene has striking physical and chemical properties that surpass most 2D materials, such as high room-temperature carrier mobilities, ,, strong broad band absorbance, high environmental stability, thickness-tunable band gaps, , intriguing magnetotransport, and topological states . These properties not only make tellurene a promising candidate for device applications, but also provide a versatile platform to validate the principles of condensed matter physics.…”
Section: Introductionmentioning
confidence: 99%